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Article: Carrier capture in InAs monolayer quantum wells grown on GaAs substrates
Title | Carrier capture in InAs monolayer quantum wells grown on GaAs substrates |
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Authors | |
Issue Date | 1998 |
Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/mee |
Citation | Microelectronic Engineering, 1998, v. 43-44, p. 287-293 How to Cite? |
Abstract | In high quality InAs monolayer (ML)/GaAs heterostructures, InAs behaves as a luminescence centre. This centre exchanges carriers with the GaAs layer through trapping and detrapping. Temperature dependence of the ratio between the integrated photoluminescence (PL) intensity from the InAs and the GaAs layers reveals the competition between capture and release of carriers by the InAs layer. It is found that the thermal escape of the carriers in the InAs layer is the dominant quenching mechanism of the InAs PL peak at higher temperatures. A good agreement is obtained between the experiment and the proposed model. 1998 Published by Elsevier Science B.V. All rights reserved. |
Persistent Identifier | http://hdl.handle.net/10722/174885 |
ISSN | 2023 Impact Factor: 2.6 2023 SCImago Journal Rankings: 0.503 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Chua, SJ | en_US |
dc.contributor.author | Xu, SJ | en_US |
dc.contributor.author | Zhang, XH | en_US |
dc.contributor.author | Zhang, X | en_US |
dc.date.accessioned | 2012-11-26T08:47:58Z | - |
dc.date.available | 2012-11-26T08:47:58Z | - |
dc.date.issued | 1998 | en_US |
dc.identifier.citation | Microelectronic Engineering, 1998, v. 43-44, p. 287-293 | en_US |
dc.identifier.issn | 0167-9317 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/174885 | - |
dc.description.abstract | In high quality InAs monolayer (ML)/GaAs heterostructures, InAs behaves as a luminescence centre. This centre exchanges carriers with the GaAs layer through trapping and detrapping. Temperature dependence of the ratio between the integrated photoluminescence (PL) intensity from the InAs and the GaAs layers reveals the competition between capture and release of carriers by the InAs layer. It is found that the thermal escape of the carriers in the InAs layer is the dominant quenching mechanism of the InAs PL peak at higher temperatures. A good agreement is obtained between the experiment and the proposed model. 1998 Published by Elsevier Science B.V. All rights reserved. | en_US |
dc.language | eng | en_US |
dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/mee | en_US |
dc.relation.ispartof | Microelectronic Engineering | en_US |
dc.title | Carrier capture in InAs monolayer quantum wells grown on GaAs substrates | en_US |
dc.type | Article | en_US |
dc.identifier.email | Xu, SJ: sjxu@hku.hk | en_US |
dc.identifier.authority | Xu, SJ=rp00821 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.scopus | eid_2-s2.0-0346310292 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0346310292&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 43-44 | en_US |
dc.identifier.spage | 287 | en_US |
dc.identifier.epage | 293 | en_US |
dc.identifier.isi | WOS:000075867000042 | - |
dc.publisher.place | Netherlands | en_US |
dc.identifier.scopusauthorid | Chua, SJ=35516064500 | en_US |
dc.identifier.scopusauthorid | Xu, SJ=7404439005 | en_US |
dc.identifier.scopusauthorid | Zhang, XH=13006006900 | en_US |
dc.identifier.scopusauthorid | Zhang, X=8543612300 | en_US |
dc.identifier.issnl | 0167-9317 | - |