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Article: Nature and elimination of yellow-band luminescence and donor-acceptor emission of undoped GaN
Title | Nature and elimination of yellow-band luminescence and donor-acceptor emission of undoped GaN |
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Authors | |
Issue Date | 1999 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 1999, v. 74 n. 19, p. 2821-2823 How to Cite? |
Abstract | Strong linkage is revealed between the presence of extended defects and the yellow-band luminescence (YL) and the donor-acceptor emissions of GaN. By enlargement hexagonal crystallites or by lateral overgrowth of GaN, the density of the extended defects can be reduced, substantially weakening both YL and DA emissions. Taking advantage of this phenomenon, elimination of both emission types is demonstrated for direct epitaxial growth of GaN on sapphire. On the other hand, a much lower density of extended defects in laterally overgrown GaN suppresses the YL emission. |
Persistent Identifier | http://hdl.handle.net/10722/174769 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Li, G | en_US |
dc.contributor.author | Chua, SJ | en_US |
dc.contributor.author | Xu, SJ | en_US |
dc.contributor.author | Wang, W | en_US |
dc.contributor.author | Li, P | en_US |
dc.contributor.author | Beaumont, B | en_US |
dc.contributor.author | Gibart, P | en_US |
dc.date.accessioned | 2012-11-26T08:47:21Z | - |
dc.date.available | 2012-11-26T08:47:21Z | - |
dc.date.issued | 1999 | en_US |
dc.identifier.citation | Applied Physics Letters, 1999, v. 74 n. 19, p. 2821-2823 | - |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/174769 | - |
dc.description.abstract | Strong linkage is revealed between the presence of extended defects and the yellow-band luminescence (YL) and the donor-acceptor emissions of GaN. By enlargement hexagonal crystallites or by lateral overgrowth of GaN, the density of the extended defects can be reduced, substantially weakening both YL and DA emissions. Taking advantage of this phenomenon, elimination of both emission types is demonstrated for direct epitaxial growth of GaN on sapphire. On the other hand, a much lower density of extended defects in laterally overgrown GaN suppresses the YL emission. | en_US |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_US |
dc.relation.ispartof | Applied Physics Letters | en_US |
dc.title | Nature and elimination of yellow-band luminescence and donor-acceptor emission of undoped GaN | en_US |
dc.type | Article | en_US |
dc.identifier.email | Xu, SJ: sjxu@hku.hk | en_US |
dc.identifier.authority | Xu, SJ=rp00821 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1063/1.124025 | - |
dc.identifier.scopus | eid_2-s2.0-0032607794 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0032607794&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 74 | en_US |
dc.identifier.issue | 19 | en_US |
dc.identifier.spage | 2821 | en_US |
dc.identifier.epage | 2823 | en_US |
dc.identifier.isi | WOS:000080152700029 | - |
dc.publisher.place | United States | en_US |
dc.identifier.scopusauthorid | Li, G=35227531800 | en_US |
dc.identifier.scopusauthorid | Chua, SJ=35516064500 | en_US |
dc.identifier.scopusauthorid | Xu, SJ=7404439005 | en_US |
dc.identifier.scopusauthorid | Wang, W=8542897400 | en_US |
dc.identifier.scopusauthorid | Li, P=26643192100 | en_US |
dc.identifier.scopusauthorid | Beaumont, B=7102277637 | en_US |
dc.identifier.scopusauthorid | Gibart, P=7101839712 | en_US |
dc.identifier.issnl | 0003-6951 | - |