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Article: Depth profiling of vacancy-type defects in homogenous and multilayered a-Si films by positron beam Doppler broadening

TitleDepth profiling of vacancy-type defects in homogenous and multilayered a-Si films by positron beam Doppler broadening
Authors
Zou, XWebb, DPChan, YCLam, YWHu, YFGong, MBeling, CDFung, S
Keywordsa-Si:H
Depth profile
Positron-annihilation spectroscopy
Issue Date1998
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jnoncrysol
Citation
Journal Of Non-Crystalline Solids, 1998, v. 227-230 PART 1, p. 105-110 How to Cite?
DOI: http://dx.doi.org/10.1016/S0022-3093(98)00165-3
AbstractPositron annihilation measurements have been carried out on a-Si:H thin films deposited by plasma enhanced chemical vapour deposition at a high rate and on pin/pin double-junction diodes prepared conventionally by means of the variable-energy positron beam Doppler-broadening technique. The depth profiles of microvoids in films grown under different conditions have been determined. We found a smaller void fraction in the surface region of all films compared to the interior. The depth profiles of microvoid-like defects in the a-Si:H films were extracted by use of the VEPFIT programme. Variable-energy positron-annihilation spectroscopy results on the diode show that the interfaces are of good quality except for the Au/n interface, consistent with the diode characteristic. © 1998 Elsevier Science B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/174760
ISSN
0022-3093
2021 Impact Factor: 4.458
2020 SCImago Journal Rankings: 0.764
ISI Accession Number ID
WOS:000074643400021
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZou, Xen_HK
dc.contributor.authorWebb, DPen_HK
dc.contributor.authorChan, YCen_HK
dc.contributor.authorLam, YWen_HK
dc.contributor.authorHu, YFen_HK
dc.contributor.authorGong, Men_HK
dc.contributor.authorBeling, CDen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2012-11-26T08:47:17Z-
dc.date.available2012-11-26T08:47:17Z-
dc.date.issued1998en_HK
dc.identifier.citationJournal Of Non-Crystalline Solids, 1998, v. 227-230 PART 1, p. 105-110en_HK
dc.identifier.issn0022-3093en_HK
dc.identifier.urihttp://hdl.handle.net/10722/174760-
dc.description.abstractPositron annihilation measurements have been carried out on a-Si:H thin films deposited by plasma enhanced chemical vapour deposition at a high rate and on pin/pin double-junction diodes prepared conventionally by means of the variable-energy positron beam Doppler-broadening technique. The depth profiles of microvoids in films grown under different conditions have been determined. We found a smaller void fraction in the surface region of all films compared to the interior. The depth profiles of microvoid-like defects in the a-Si:H films were extracted by use of the VEPFIT programme. Variable-energy positron-annihilation spectroscopy results on the diode show that the interfaces are of good quality except for the Au/n interface, consistent with the diode characteristic. © 1998 Elsevier Science B.V. All rights reserved.en_HK
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/jnoncrysolen_HK
dc.relation.ispartofJournal of Non-Crystalline Solidsen_HK
dc.rightsJournal of Non-Crystalline Solids. Copyright © Elsevier BV.-
dc.subjecta-Si:Hen_HK
dc.subjectDepth profileen_HK
dc.subjectPositron-annihilation spectroscopyen_HK
dc.titleDepth profiling of vacancy-type defects in homogenous and multilayered a-Si films by positron beam Doppler broadeningen_HK
dc.typeArticleen_HK
dc.identifier.emailBeling, CD: cdbeling@hkucc.hku.hken_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityBeling, CD=rp00660en_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1016/S0022-3093(98)00165-3-
dc.identifier.scopuseid_2-s2.0-0032068317en_HK
dc.identifier.hkuros34912-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0032068317&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume227-230en_HK
dc.identifier.issuePART 1en_HK
dc.identifier.spage105en_HK
dc.identifier.epage110en_HK
dc.identifier.isiWOS:000074643400021-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridZou, X=18234346500en_HK
dc.identifier.scopusauthoridWebb, DP=7401528584en_HK
dc.identifier.scopusauthoridChan, YC=7403676038en_HK
dc.identifier.scopusauthoridLam, YW=7202563950en_HK
dc.identifier.scopusauthoridHu, YF=7407119615en_HK
dc.identifier.scopusauthoridGong, M=9273057400en_HK
dc.identifier.scopusauthoridBeling, CD=7005864180en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl0022-3093-

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