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Article: Surface hydrogen effects on Ge surface segregation during silicon gas source molecular beam epitaxy

TitleSurface hydrogen effects on Ge surface segregation during silicon gas source molecular beam epitaxy
Authors
Ohtani, NoboruMokler, ScottXie, Mao HaiZhang, JingJoyce, Bruce A
Issue Date1994
PublisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htm
Citation
Japanese Journal Of Applied Physics, Part 1: Regular Papers And Short Notes And Review Papers, 1994, v. 33 n. 4 B, p. 2311-2316 How to Cite?
AbstractUsing reflection-high-energy-electron diffraction (RHEED), the temperature dependence of Ge surface segregation during silicon gas source molecular beam epitaxy (Si-GSMBE) from hydride sources was studied, and it was found that surface hydrogen, which is produced by the dissociation of Si2H6 and GeH4 on the growing surface, may act as a growth-controlling surfactant. Comparison with results from solid source growth results suggests that hydrogen significantly suppresses the Ge segregation. Segregation kinetics were examined through simulation studies and the results indicate that the addition of surface hydrogen to the system inhibits segregation due to a lowering of the Gibbs heat of segregation.
Persistent Identifierhttp://hdl.handle.net/10722/174708
ISSN
0021-4922
2023 Impact Factor: 1.5
2023 SCImago Journal Rankings: 0.307
ISI Accession Number ID
WOS:A1994NR95900036

 

DC FieldValueLanguage
dc.contributor.authorOhtani, Noboruen_US
dc.contributor.authorMokler, Scotten_US
dc.contributor.authorXie, Mao Haien_US
dc.contributor.authorZhang, Jingen_US
dc.contributor.authorJoyce, Bruce Aen_US
dc.date.accessioned2012-11-26T08:46:59Z-
dc.date.available2012-11-26T08:46:59Z-
dc.date.issued1994en_US
dc.identifier.citationJapanese Journal Of Applied Physics, Part 1: Regular Papers And Short Notes And Review Papers, 1994, v. 33 n. 4 B, p. 2311-2316en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/10722/174708-
dc.description.abstractUsing reflection-high-energy-electron diffraction (RHEED), the temperature dependence of Ge surface segregation during silicon gas source molecular beam epitaxy (Si-GSMBE) from hydride sources was studied, and it was found that surface hydrogen, which is produced by the dissociation of Si2H6 and GeH4 on the growing surface, may act as a growth-controlling surfactant. Comparison with results from solid source growth results suggests that hydrogen significantly suppresses the Ge segregation. Segregation kinetics were examined through simulation studies and the results indicate that the addition of surface hydrogen to the system inhibits segregation due to a lowering of the Gibbs heat of segregation.en_US
dc.languageengen_US
dc.publisherInstitute of Pure and Applied Physics. The Journal's web site is located at http://www.ipap.jp/jjap/index.htmen_US
dc.relation.ispartofJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papersen_US
dc.titleSurface hydrogen effects on Ge surface segregation during silicon gas source molecular beam epitaxyen_US
dc.typeArticleen_US
dc.identifier.emailXie, Mao Hai: mhxie@hku.hken_US
dc.identifier.authorityXie, Mao Hai=rp00818en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0028405023en_US
dc.identifier.volume33en_US
dc.identifier.issue4 Ben_US
dc.identifier.spage2311en_US
dc.identifier.epage2316en_US
dc.identifier.isiWOS:A1994NR95900036-
dc.publisher.placeJapanen_US
dc.identifier.scopusauthoridOhtani, Noboru=7103392778en_US
dc.identifier.scopusauthoridMokler, Scott=6603054444en_US
dc.identifier.scopusauthoridXie, Mao Hai=7202255416en_US
dc.identifier.scopusauthoridZhang, Jing=36062542300en_US
dc.identifier.scopusauthoridJoyce, Bruce A=7102210065en_US
dc.identifier.issnl0021-4922-

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