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Article: A calculation of the photovoltage at the metal-semiconductor interface
Title | A calculation of the photovoltage at the metal-semiconductor interface |
---|---|
Authors | |
Issue Date | 1993 |
Publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc |
Citation | Surface Science, 1993, v. 294 n. 3, p. 367-372 How to Cite? |
Abstract | The photovoltage at the metal-semiconductor interface has been calculated with a simple model in which the influence of thermionic emission, tunneling, carrier recombination and leakage has been considered. The dependence of the photovoltage on temperature, the Schottky barrier height, the lifetime of carriers and the leakage resistance is reported. © 1993. |
Persistent Identifier | http://hdl.handle.net/10722/174702 |
ISSN | 2023 Impact Factor: 2.1 2023 SCImago Journal Rankings: 0.385 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Ling, CC | en_US |
dc.contributor.author | Chen, TP | en_US |
dc.contributor.author | Fung, S | en_US |
dc.date.accessioned | 2012-11-26T08:46:57Z | - |
dc.date.available | 2012-11-26T08:46:57Z | - |
dc.date.issued | 1993 | en_US |
dc.identifier.citation | Surface Science, 1993, v. 294 n. 3, p. 367-372 | en_US |
dc.identifier.issn | 0039-6028 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/174702 | - |
dc.description.abstract | The photovoltage at the metal-semiconductor interface has been calculated with a simple model in which the influence of thermionic emission, tunneling, carrier recombination and leakage has been considered. The dependence of the photovoltage on temperature, the Schottky barrier height, the lifetime of carriers and the leakage resistance is reported. © 1993. | en_US |
dc.language | eng | en_US |
dc.publisher | Elsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc | en_US |
dc.relation.ispartof | Surface Science | en_US |
dc.title | A calculation of the photovoltage at the metal-semiconductor interface | en_US |
dc.type | Article | en_US |
dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | en_US |
dc.identifier.email | Fung, S: sfung@hku.hk | en_US |
dc.identifier.authority | Ling, CC=rp00747 | en_US |
dc.identifier.authority | Fung, S=rp00695 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.scopus | eid_2-s2.0-0027657132 | en_US |
dc.identifier.volume | 294 | en_US |
dc.identifier.issue | 3 | en_US |
dc.identifier.spage | 367 | en_US |
dc.identifier.epage | 372 | en_US |
dc.identifier.isi | WOS:A1993LX59900021 | - |
dc.publisher.place | Netherlands | en_US |
dc.identifier.scopusauthorid | Ling, CC=13310239300 | en_US |
dc.identifier.scopusauthorid | Chen, TP=27169708800 | en_US |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_US |
dc.identifier.issnl | 0039-6028 | - |