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Article: A calculation of the photovoltage at the metal-semiconductor interface

TitleA calculation of the photovoltage at the metal-semiconductor interface
Authors
Ling, CCChen, TPFung, S
Issue Date1993
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/susc
Citation
Surface Science, 1993, v. 294 n. 3, p. 367-372 How to Cite?
AbstractThe photovoltage at the metal-semiconductor interface has been calculated with a simple model in which the influence of thermionic emission, tunneling, carrier recombination and leakage has been considered. The dependence of the photovoltage on temperature, the Schottky barrier height, the lifetime of carriers and the leakage resistance is reported. © 1993.
Persistent Identifierhttp://hdl.handle.net/10722/174702
ISSN
0039-6028
2023 Impact Factor: 2.1
2023 SCImago Journal Rankings: 0.385
ISI Accession Number ID
WOS:A1993LX59900021

 

DC FieldValueLanguage
dc.contributor.authorLing, CCen_US
dc.contributor.authorChen, TPen_US
dc.contributor.authorFung, Sen_US
dc.date.accessioned2012-11-26T08:46:57Z-
dc.date.available2012-11-26T08:46:57Z-
dc.date.issued1993en_US
dc.identifier.citationSurface Science, 1993, v. 294 n. 3, p. 367-372en_US
dc.identifier.issn0039-6028en_US
dc.identifier.urihttp://hdl.handle.net/10722/174702-
dc.description.abstractThe photovoltage at the metal-semiconductor interface has been calculated with a simple model in which the influence of thermionic emission, tunneling, carrier recombination and leakage has been considered. The dependence of the photovoltage on temperature, the Schottky barrier height, the lifetime of carriers and the leakage resistance is reported. © 1993.en_US
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/suscen_US
dc.relation.ispartofSurface Scienceen_US
dc.titleA calculation of the photovoltage at the metal-semiconductor interfaceen_US
dc.typeArticleen_US
dc.identifier.emailLing, CC: ccling@hkucc.hku.hken_US
dc.identifier.emailFung, S: sfung@hku.hken_US
dc.identifier.authorityLing, CC=rp00747en_US
dc.identifier.authorityFung, S=rp00695en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0027657132en_US
dc.identifier.volume294en_US
dc.identifier.issue3en_US
dc.identifier.spage367en_US
dc.identifier.epage372en_US
dc.identifier.isiWOS:A1993LX59900021-
dc.publisher.placeNetherlandsen_US
dc.identifier.scopusauthoridLing, CC=13310239300en_US
dc.identifier.scopusauthoridChen, TP=27169708800en_US
dc.identifier.scopusauthoridFung, S=7201970040en_US
dc.identifier.issnl0039-6028-

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