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- Publisher Website: 10.1016/0038-1101(93)90109-4
- Scopus: eid_2-s2.0-0027624839
- WOS: WOS:A1993LF20500003
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Article: Current transport and its effect on the determination of the Schottky-barrier height in a typical system: Gold on silicon
Title | Current transport and its effect on the determination of the Schottky-barrier height in a typical system: Gold on silicon |
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Authors | |
Issue Date | 1993 |
Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse |
Citation | Solid-State Electronics, 1993, v. 36 n. 7, p. 949-954 How to Cite? |
Abstract | The measurements of photovoltage, internal photoemission, current-voltage (I-V) and capacitance-voltage (C-V) have been performed for Au on n-Si (111) within a temperature range of 7 to 300 K. The values of Schottky-barrier height at room temperature obtained from these four measurements are in very good agreement, but conflicting results have been obtained at low temperatures. The measurements of both the internal photoemission and the C-V show a negative temperature dependence of the barrier height which is almost identical to that of the indirect energy band gap in silicon, but the barrier height obtained from the photovoltage measurements and the I-V measurements strongly decreases as temperature decreases. In this paper, the influence of the current transport on the determination of the Schottky-barrier height is discussed, and it is demonstrated that the conflicting results may be explained well in terms of the recombination current involved in the photovoltage measurements and the I-V measurements. |
Persistent Identifier | http://hdl.handle.net/10722/174699 |
ISSN | 2023 Impact Factor: 1.4 2023 SCImago Journal Rankings: 0.348 |
ISI Accession Number ID |
DC Field | Value | Language |
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dc.contributor.author | Chen, TP | en_HK |
dc.contributor.author | Lee, TC | en_HK |
dc.contributor.author | Ling, CC | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.date.accessioned | 2012-11-26T08:46:56Z | - |
dc.date.available | 2012-11-26T08:46:56Z | - |
dc.date.issued | 1993 | en_HK |
dc.identifier.citation | Solid-State Electronics, 1993, v. 36 n. 7, p. 949-954 | en_HK |
dc.identifier.issn | 0038-1101 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/174699 | - |
dc.description.abstract | The measurements of photovoltage, internal photoemission, current-voltage (I-V) and capacitance-voltage (C-V) have been performed for Au on n-Si (111) within a temperature range of 7 to 300 K. The values of Schottky-barrier height at room temperature obtained from these four measurements are in very good agreement, but conflicting results have been obtained at low temperatures. The measurements of both the internal photoemission and the C-V show a negative temperature dependence of the barrier height which is almost identical to that of the indirect energy band gap in silicon, but the barrier height obtained from the photovoltage measurements and the I-V measurements strongly decreases as temperature decreases. In this paper, the influence of the current transport on the determination of the Schottky-barrier height is discussed, and it is demonstrated that the conflicting results may be explained well in terms of the recombination current involved in the photovoltage measurements and the I-V measurements. | en_HK |
dc.language | eng | en_US |
dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/sse | en_HK |
dc.relation.ispartof | Solid-State Electronics | en_HK |
dc.title | Current transport and its effect on the determination of the Schottky-barrier height in a typical system: Gold on silicon | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.authority | Ling, CC=rp00747 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1016/0038-1101(93)90109-4 | en_HK |
dc.identifier.scopus | eid_2-s2.0-0027624839 | en_HK |
dc.identifier.volume | 36 | en_HK |
dc.identifier.issue | 7 | en_HK |
dc.identifier.spage | 949 | en_HK |
dc.identifier.epage | 954 | en_HK |
dc.identifier.isi | WOS:A1993LF20500003 | - |
dc.publisher.place | United Kingdom | en_HK |
dc.identifier.scopusauthorid | Chen, TP=27169708800 | en_HK |
dc.identifier.scopusauthorid | Lee, TC=36347141200 | en_HK |
dc.identifier.scopusauthorid | Ling, CC=13310239300 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.issnl | 0038-1101 | - |