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Article: Observation of optically-active metastable defects in undoped GaN epilayers
Title | Observation of optically-active metastable defects in undoped GaN epilayers |
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Authors | |
Issue Date | 1998 |
Publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ |
Citation | Applied Physics Letters, 1998, v. 72 n. 19, p. 2451-2453 How to Cite? |
Abstract | Optically-active defects of undoped GaN epilayers grown on sapphire by metalorganic chemical vapor epitaxy was investigated with photoluminescence. A new metastable defect emitting blue light was found, besides the well-known yellow luminescence centers. With excitation by the 325 nm He-Cd laser, this metastable defect, at low temperature, exhibits the luminescence fatigue effect with the decay time determined to be about 6 min. When the temperature is increased to room temperature, it recovers its optically-active state. The yellow band emission increases in intensity as the blue band emission decreases in intensity. Analysis shows that this metastable center is a hole trap, and Ga vacancy is its most probable candidate. © 1998 American Institute of Physics. |
Persistent Identifier | http://hdl.handle.net/10722/174651 |
ISSN | 2023 Impact Factor: 3.5 2023 SCImago Journal Rankings: 0.976 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Xu, SJ | en_US |
dc.contributor.author | Li, G | en_US |
dc.contributor.author | Chua, SJ | en_US |
dc.contributor.author | Wang, XC | en_US |
dc.contributor.author | Wang, W | en_US |
dc.date.accessioned | 2012-11-26T08:46:42Z | - |
dc.date.available | 2012-11-26T08:46:42Z | - |
dc.date.issued | 1998 | en_US |
dc.identifier.citation | Applied Physics Letters, 1998, v. 72 n. 19, p. 2451-2453 | - |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/174651 | - |
dc.description.abstract | Optically-active defects of undoped GaN epilayers grown on sapphire by metalorganic chemical vapor epitaxy was investigated with photoluminescence. A new metastable defect emitting blue light was found, besides the well-known yellow luminescence centers. With excitation by the 325 nm He-Cd laser, this metastable defect, at low temperature, exhibits the luminescence fatigue effect with the decay time determined to be about 6 min. When the temperature is increased to room temperature, it recovers its optically-active state. The yellow band emission increases in intensity as the blue band emission decreases in intensity. Analysis shows that this metastable center is a hole trap, and Ga vacancy is its most probable candidate. © 1998 American Institute of Physics. | en_US |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://apl.aip.org/ | en_US |
dc.relation.ispartof | Applied Physics Letters | en_US |
dc.title | Observation of optically-active metastable defects in undoped GaN epilayers | en_US |
dc.type | Article | en_US |
dc.identifier.email | Xu, SJ: sjxu@hku.hk | en_US |
dc.identifier.authority | Xu, SJ=rp00821 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.doi | 10.1063/1.121379 | en_US |
dc.identifier.scopus | eid_2-s2.0-0001715851 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-0001715851&selection=ref&src=s&origin=recordpage | en_US |
dc.identifier.volume | 72 | en_US |
dc.identifier.issue | 19 | en_US |
dc.identifier.spage | 2451 | en_US |
dc.identifier.epage | 2453 | en_US |
dc.identifier.isi | WOS:000073540600033 | - |
dc.publisher.place | United States | en_US |
dc.identifier.scopusauthorid | Xu, SJ=7404439005 | en_US |
dc.identifier.scopusauthorid | Li, G=25422502200 | en_US |
dc.identifier.scopusauthorid | Chua, SJ=35516064500 | en_US |
dc.identifier.scopusauthorid | Wang, XC=8527523100 | en_US |
dc.identifier.scopusauthorid | Wang, W=7501762205 | en_US |
dc.identifier.issnl | 0003-6951 | - |