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Article: Molecular beam epitaxy of a low strain II-VI heterostructure: ZnTe/CdSe

TitleMolecular beam epitaxy of a low strain II-VI heterostructure: ZnTe/CdSe
Authors
Luo, HSamarth, NZhang, FCPareek, ADobrowolska, MFurdyna, JKMahalingam, KOtsuka, NChou, WCPetrou, AQadri, SB
Issue Date1991
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1991, v. 58 n. 16, p. 1783-1785 How to Cite?
DOI: http://dx.doi.org/10.1063/1.105090
AbstractWe report the growth of a new closely lattice-matched II-VI heterostructure: ZnTe/CdSe (Δa/a∼0.3%). Epilayers of zinc blende CdSe grown on ZnTe buffer layers are shown to have much better quality than those grown earlier (with a 7% mismatch) on GaAs substrates. This permitted the first successful growth of high quality superlattices of ZnTe/CdSe. The superlattices were studied by x-ray diffraction, transmission electron microscopy, and optical techniques. Results of photoluminescence and optical transmission measurements show that ZnTe/CdSe superlattices have a very small valence-band offset.
Persistent Identifierhttp://hdl.handle.net/10722/174616
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:A1991FH09700031

 

DC FieldValueLanguage
dc.contributor.authorLuo, Hen_US
dc.contributor.authorSamarth, Nen_US
dc.contributor.authorZhang, FCen_US
dc.contributor.authorPareek, Aen_US
dc.contributor.authorDobrowolska, Men_US
dc.contributor.authorFurdyna, JKen_US
dc.contributor.authorMahalingam, Ken_US
dc.contributor.authorOtsuka, Nen_US
dc.contributor.authorChou, WCen_US
dc.contributor.authorPetrou, Aen_US
dc.contributor.authorQadri, SBen_US
dc.date.accessioned2012-11-26T08:46:32Z-
dc.date.available2012-11-26T08:46:32Z-
dc.date.issued1991en_US
dc.identifier.citationApplied Physics Letters, 1991, v. 58 n. 16, p. 1783-1785-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/174616-
dc.description.abstractWe report the growth of a new closely lattice-matched II-VI heterostructure: ZnTe/CdSe (Δa/a∼0.3%). Epilayers of zinc blende CdSe grown on ZnTe buffer layers are shown to have much better quality than those grown earlier (with a 7% mismatch) on GaAs substrates. This permitted the first successful growth of high quality superlattices of ZnTe/CdSe. The superlattices were studied by x-ray diffraction, transmission electron microscopy, and optical techniques. Results of photoluminescence and optical transmission measurements show that ZnTe/CdSe superlattices have a very small valence-band offset.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleMolecular beam epitaxy of a low strain II-VI heterostructure: ZnTe/CdSeen_US
dc.typeArticleen_US
dc.identifier.emailZhang, FC: fuchun@hkucc.hku.hken_US
dc.identifier.authorityZhang, FC=rp00840en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.105090en_US
dc.identifier.scopuseid_2-s2.0-0000578261en_US
dc.identifier.volume58en_US
dc.identifier.issue16en_US
dc.identifier.spage1783en_US
dc.identifier.epage1785en_US
dc.identifier.isiWOS:A1991FH09700031-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLuo, H=24772750400en_US
dc.identifier.scopusauthoridSamarth, N=7006288661en_US
dc.identifier.scopusauthoridZhang, FC=14012468800en_US
dc.identifier.scopusauthoridPareek, A=23016533100en_US
dc.identifier.scopusauthoridDobrowolska, M=10539412000en_US
dc.identifier.scopusauthoridFurdyna, JK=7101686144en_US
dc.identifier.scopusauthoridMahalingam, K=7004119556en_US
dc.identifier.scopusauthoridOtsuka, N=7201814751en_US
dc.identifier.scopusauthoridChou, WC=7202273085en_US
dc.identifier.scopusauthoridPetrou, A=7005224232en_US
dc.identifier.scopusauthoridQadri, SB=24497162300en_US
dc.identifier.issnl0003-6951-

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