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Article: Silica capping for Al 0.3Ga 0.7As/GaAs and In 0.2Ga 0.8As/GaAs quantum well intermixing

TitleSilica capping for Al 0.3Ga 0.7As/GaAs and In 0.2Ga 0.8As/GaAs quantum well intermixing
Authors
Li, GChua, SJXu, SJWang, XCSaher Helmy, AKe, MLMarsh, JH
Issue Date1998
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1998, v. 73 n. 23, p. 3393-3395 How to Cite?
DOI: http://dx.doi.org/10.1063/1.122777
AbstractSpin-on silica capping has been demonstrated to be an effective dielectric encapsulant layer for quantum well (QW) intermixing at temperatures significantly lower than for conventionally deposited silica. A blueshift of up to 125 meV was observed in the photoluminescence (PL) peak energy of both GaAs and InGaAs QWs after annealing for less than 60 s at 850°C, without noticeable degradation in the PL emission intensity. A threshold temperature was identified below which no significant QW disordering took place. The activation energy for Al diffusion in Al 0.3Ga 0.7As/GaAs QWs was about 2.55 eV. Broadly similar effects were seen for In 0.2Ga 0.8As/GaAs QWs but, in addition, strain effects appear to enhance disordering during the early stages of the anneal. © 1998 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/174606
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000077432600025
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLi, Gen_US
dc.contributor.authorChua, SJen_US
dc.contributor.authorXu, SJen_US
dc.contributor.authorWang, XCen_US
dc.contributor.authorSaher Helmy, Aen_US
dc.contributor.authorKe, MLen_US
dc.contributor.authorMarsh, JHen_US
dc.date.accessioned2012-11-26T08:46:28Z-
dc.date.available2012-11-26T08:46:28Z-
dc.date.issued1998en_US
dc.identifier.citationApplied Physics Letters, 1998, v. 73 n. 23, p. 3393-3395-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/174606-
dc.description.abstractSpin-on silica capping has been demonstrated to be an effective dielectric encapsulant layer for quantum well (QW) intermixing at temperatures significantly lower than for conventionally deposited silica. A blueshift of up to 125 meV was observed in the photoluminescence (PL) peak energy of both GaAs and InGaAs QWs after annealing for less than 60 s at 850°C, without noticeable degradation in the PL emission intensity. A threshold temperature was identified below which no significant QW disordering took place. The activation energy for Al diffusion in Al 0.3Ga 0.7As/GaAs QWs was about 2.55 eV. Broadly similar effects were seen for In 0.2Ga 0.8As/GaAs QWs but, in addition, strain effects appear to enhance disordering during the early stages of the anneal. © 1998 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleSilica capping for Al 0.3Ga 0.7As/GaAs and In 0.2Ga 0.8As/GaAs quantum well intermixingen_US
dc.typeArticleen_US
dc.identifier.emailXu, SJ: sjxu@hku.hken_US
dc.identifier.authorityXu, SJ=rp00821en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.122777en_US
dc.identifier.scopuseid_2-s2.0-0000263624en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0000263624&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume73en_US
dc.identifier.issue23en_US
dc.identifier.spage3393en_US
dc.identifier.epage3395en_US
dc.identifier.isiWOS:000077432600025-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridLi, G=35227531800en_US
dc.identifier.scopusauthoridChua, SJ=35516064500en_US
dc.identifier.scopusauthoridXu, SJ=7404439005en_US
dc.identifier.scopusauthoridWang, XC=9333737100en_US
dc.identifier.scopusauthoridSaher Helmy, A=6602792690en_US
dc.identifier.scopusauthoridKe, ML=7005564233en_US
dc.identifier.scopusauthoridMarsh, JH=7401946293en_US
dc.identifier.issnl0003-6951-

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