File Download

There are no files associated with this item.

  Links for fulltext
     (May Require Subscription)
Supplementary

Conference Paper: Influence of annealing on ZnO nanorod/NiO LEDs

TitleInfluence of annealing on ZnO nanorod/NiO LEDs
Authors
Hsu, YFXi, YYDjurišić, ABNg, AMCChan, WK
KeywordsLED
NiO
ZnO
Issue Date2009
PublisherAmerican Institute of Physics. The Journal's web site is located at http://proceedings.aip.org/
Citation
AIP Conference Proceedings, 2009, v. 1199 n. 1, p. 513-514 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3295533
AbstractZinc oxide (ZnO) is a promising candidate for short-wavelength optoelectronic devices. Due to the lack of stability and reproducibility of p-type ZnO, ZnO heterojunction devices are of considerable interest. In this work, the performance of ZnO nanorod/NiO light emitting diodes (LEDs) was investigated. Both materials were fabricated using inexpensive solution based process. Due to the low fabrication temperature, ZnO nanorods contained considerable concentration of point defects. Post-fabrication treatments could significantly change ZnO nanorod properties. The effect of post-fabrication annealing on ZnO properties and device performance were discussed. © 2009 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/168851
ISSN
0094-243X
2023 SCImago Journal Rankings: 0.152
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorHsu, YFen_HK
dc.contributor.authorXi, YYen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorChan, WKen_HK
dc.date.accessioned2012-10-08T03:35:03Z-
dc.date.available2012-10-08T03:35:03Z-
dc.date.issued2009en_HK
dc.identifier.citationAIP Conference Proceedings, 2009, v. 1199 n. 1, p. 513-514-
dc.identifier.issn0094-243Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/168851-
dc.description.abstractZinc oxide (ZnO) is a promising candidate for short-wavelength optoelectronic devices. Due to the lack of stability and reproducibility of p-type ZnO, ZnO heterojunction devices are of considerable interest. In this work, the performance of ZnO nanorod/NiO light emitting diodes (LEDs) was investigated. Both materials were fabricated using inexpensive solution based process. Due to the low fabrication temperature, ZnO nanorods contained considerable concentration of point defects. Post-fabrication treatments could significantly change ZnO nanorod properties. The effect of post-fabrication annealing on ZnO properties and device performance were discussed. © 2009 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://proceedings.aip.org/-
dc.relation.ispartofAIP Conference Proceedingsen_HK
dc.subjectLEDen_HK
dc.subjectNiOen_HK
dc.subjectZnOen_HK
dc.titleInfluence of annealing on ZnO nanorod/NiO LEDsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.3295533en_HK
dc.identifier.scopuseid_2-s2.0-74849111215en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-74849111215&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume1199en_HK
dc.identifier.issue1-
dc.identifier.spage513en_HK
dc.identifier.epage514en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHsu, YF=16063930300en_HK
dc.identifier.scopusauthoridXi, YY=23053521800en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.issnl0094-243X-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats