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Article: Tunable interfacial properties of epitaxial graphene on metal substrates

TitleTunable interfacial properties of epitaxial graphene on metal substrates
Authors
Gao, MPan, YZhang, CHu, HYang, RLu, HCai, JDu, SLiu, FGao, HJ
Issue Date2010
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2010, v. 96 n. 5, article no. 053109 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3309671
AbstractWe report on tuning interfacial properties of epitaxially-grown graphenes with different kinds of metal substrates based on scanning tunneling microscopy experiments and density functional theory calculations. Three kinds of metal substrates, Ni(111), Pt(111), and Ru(0001), show different interactions with the epitaxially grown graphene at the interfaces. The different interfacial interaction making graphene n -type and p -type doped, leads to the polarity change of the thermoelectric property of the graphene/metal systems. These findings may give further insights to the interfacial interactions in the graphene/metal systems and promote the use of graphene-based heterostructures in devices. © 2010 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/168433
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000274319500090
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorGao, Men_US
dc.contributor.authorPan, Yen_US
dc.contributor.authorZhang, Cen_US
dc.contributor.authorHu, Hen_US
dc.contributor.authorYang, Ren_US
dc.contributor.authorLu, Hen_US
dc.contributor.authorCai, Jen_US
dc.contributor.authorDu, Sen_US
dc.contributor.authorLiu, Fen_US
dc.contributor.authorGao, HJen_US
dc.date.accessioned2012-10-08T03:18:52Z-
dc.date.available2012-10-08T03:18:52Z-
dc.date.issued2010en_US
dc.identifier.citationApplied Physics Letters, 2010, v. 96 n. 5, article no. 053109-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/168433-
dc.description.abstractWe report on tuning interfacial properties of epitaxially-grown graphenes with different kinds of metal substrates based on scanning tunneling microscopy experiments and density functional theory calculations. Three kinds of metal substrates, Ni(111), Pt(111), and Ru(0001), show different interactions with the epitaxially grown graphene at the interfaces. The different interfacial interaction making graphene n -type and p -type doped, leads to the polarity change of the thermoelectric property of the graphene/metal systems. These findings may give further insights to the interfacial interactions in the graphene/metal systems and promote the use of graphene-based heterostructures in devices. © 2010 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleTunable interfacial properties of epitaxial graphene on metal substratesen_US
dc.typeArticleen_US
dc.identifier.emailHu, H:haohu@hku.hken_US
dc.identifier.authorityHu, H=rp00707en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.3309671en_US
dc.identifier.scopuseid_2-s2.0-76449108637en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-76449108637&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume96en_US
dc.identifier.issue5en_US
dc.identifier.spagearticle no. 053109-
dc.identifier.epagearticle no. 053109-
dc.identifier.isiWOS:000274319500090-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridGao, M=7201511752en_US
dc.identifier.scopusauthoridPan, Y=36130564100en_US
dc.identifier.scopusauthoridZhang, C=25822868100en_US
dc.identifier.scopusauthoridHu, H=7404097564en_US
dc.identifier.scopusauthoridYang, R=8048702400en_US
dc.identifier.scopusauthoridLu, H=26430439500en_US
dc.identifier.scopusauthoridCai, J=23007861700en_US
dc.identifier.scopusauthoridDu, S=7202757863en_US
dc.identifier.scopusauthoridLiu, F=26428192500en_US
dc.identifier.scopusauthoridGao, HJ=26436363800en_US
dc.identifier.issnl0003-6951-

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