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Article: Current-induced colossal electroresistance in La0.8Ba0.2MnO3 films fabricated by sol–gel method

TitleCurrent-induced colossal electroresistance in La0.8Ba0.2MnO3 films fabricated by sol–gel method
Authors
Bu, HJGao, JHu, GJDai, N
KeywordsColossal electroresistance
Conductive filaments
Critical value
Dc-bias current
Electroresistance
Issue Date2012
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physb
Citation
Physica B: Condensed Matter, 2012, v. 407 n. 13, p. 2500-2503 How to Cite?
DOI: http://dx.doi.org/10.1016/j.physb.2012.03.054
AbstractTransport properties of La 0.8Ba 0.2MnO 3 thin films deposited by the sol-gel method were investigated. It has been found that resistivity plateaus occurred in the ρ-T curves after application of a dc bias current over a critical value. A current of 200 μA could induce a huge resistance variation ∼1200% in these La 0.8Ba 0.2MnO 3 films near room temperature, demonstrating a colossal electroresistance effect. Such strange transport behavior suggests the formation of conductive filaments and that the multi-phase coexistence is sensitive to external stimuli. This phenomenon may find applications in sensing and logic devices. © 2012 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/159796
ISSN
0921-4526
2021 Impact Factor: 2.988
2020 SCImago Journal Rankings: 0.485
ISI Accession Number ID
WOS:000304664500026

 

DC FieldValueLanguage
dc.contributor.authorBu, HJen_US
dc.contributor.authorGao, Jen_US
dc.contributor.authorHu, GJen_US
dc.contributor.authorDai, Nen_US
dc.date.accessioned2012-08-16T05:56:40Z-
dc.date.available2012-08-16T05:56:40Z-
dc.date.issued2012en_US
dc.identifier.citationPhysica B: Condensed Matter, 2012, v. 407 n. 13, p. 2500-2503en_US
dc.identifier.issn0921-4526-
dc.identifier.urihttp://hdl.handle.net/10722/159796-
dc.description.abstractTransport properties of La 0.8Ba 0.2MnO 3 thin films deposited by the sol-gel method were investigated. It has been found that resistivity plateaus occurred in the ρ-T curves after application of a dc bias current over a critical value. A current of 200 μA could induce a huge resistance variation ∼1200% in these La 0.8Ba 0.2MnO 3 films near room temperature, demonstrating a colossal electroresistance effect. Such strange transport behavior suggests the formation of conductive filaments and that the multi-phase coexistence is sensitive to external stimuli. This phenomenon may find applications in sensing and logic devices. © 2012 Elsevier B.V. All rights reserved.-
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/physben_US
dc.relation.ispartofPhysica B: Condensed Matteren_US
dc.subjectColossal electroresistance-
dc.subjectConductive filaments-
dc.subjectCritical value-
dc.subjectDc-bias current-
dc.subjectElectroresistance-
dc.titleCurrent-induced colossal electroresistance in La0.8Ba0.2MnO3 films fabricated by sol–gel methoden_US
dc.typeArticleen_US
dc.identifier.emailGao, J: jugao@hku.hken_US
dc.identifier.authorityGao, J=rp00699en_US
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.physb.2012.03.054-
dc.identifier.scopuseid_2-s2.0-84860375258-
dc.identifier.hkuros204032en_US
dc.identifier.volume407en_US
dc.identifier.issue13-
dc.identifier.spage2500en_US
dc.identifier.epage2503en_US
dc.identifier.isiWOS:000304664500026-
dc.publisher.placeNetherlands-
dc.identifier.citeulike10617359-
dc.identifier.issnl0921-4526-

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