File Download
  Links for fulltext
     (May Require Subscription)
Supplementary

Article: InGaN light-emitting diodes with indium-tin-oxide sub-micron lenses patterned by nanosphere lithography

TitleInGaN light-emitting diodes with indium-tin-oxide sub-micron lenses patterned by nanosphere lithography
Authors
Zhang, QLi, KHChoi, HW
KeywordsDamage-free
Emission characteristics
Finite difference time domain simulations
Gan light-emitting diodes
Indium tin oxide
Issue Date2012
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2012, v. 100 n. 6, article no. 061120 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3684505
AbstractClose-packed micro-lenses with dimensions of the order of wavelength have been integrated onto the indium-tin-oxide (ITO) layer of GaN light-emitting diodes employing nanosphere lithography. The ITO lens arrays are transferred from a self-assembled silica nanosphere array by dry etching, leaving the semiconductor layer damage-free. An enhancement of up to 63.5% on optical output power from the lensed light-emitting diode (LED) has been observed. Lens-patterned LEDs are also found to exhibit reduced emission divergence. Three-dimensional finite-difference time-domain simulations performed for light extraction and emission characteristics are found to be consistent with the observed results. © 2012 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/155732
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000300214000020
Funding AgencyGrant Number
Research Grant Council of Hong KongHKU 7117/11 E
Funding Information:

This work was supported by a GRF grant of the Research Grant Council of Hong Kong (Project No. HKU 7117/11 E).

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhang, Qen_US
dc.contributor.authorLi, KHen_US
dc.contributor.authorChoi, HWen_US
dc.date.accessioned2012-08-08T08:35:04Z-
dc.date.available2012-08-08T08:35:04Z-
dc.date.issued2012en_US
dc.identifier.citationApplied Physics Letters, 2012, v. 100 n. 6, article no. 061120-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155732-
dc.description.abstractClose-packed micro-lenses with dimensions of the order of wavelength have been integrated onto the indium-tin-oxide (ITO) layer of GaN light-emitting diodes employing nanosphere lithography. The ITO lens arrays are transferred from a self-assembled silica nanosphere array by dry etching, leaving the semiconductor layer damage-free. An enhancement of up to 63.5% on optical output power from the lensed light-emitting diode (LED) has been observed. Lens-patterned LEDs are also found to exhibit reduced emission divergence. Three-dimensional finite-difference time-domain simulations performed for light extraction and emission characteristics are found to be consistent with the observed results. © 2012 American Institute of Physics.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.rightsCopyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2012, v. 100 n. 6, article no. 061120 and may be found at https://doi.org/10.1063/1.3684505-
dc.subjectDamage-free-
dc.subjectEmission characteristics-
dc.subjectFinite difference time domain simulations-
dc.subjectGan light-emitting diodes-
dc.subjectIndium tin oxide-
dc.titleInGaN light-emitting diodes with indium-tin-oxide sub-micron lenses patterned by nanosphere lithographyen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW: hwchoi@eee.hku.hk, hwchoi@hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturepublished_or_final_versionen_US
dc.identifier.doi10.1063/1.3684505en_US
dc.identifier.scopuseid_2-s2.0-84863160499-
dc.identifier.hkuros204473-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84857214332&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume100en_US
dc.identifier.issue6-
dc.identifier.spagearticle no. 061120-
dc.identifier.epagearticle no. 061120-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000300214000020-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridLi, KH=8976237500en_US
dc.identifier.scopusauthoridZhang, Q=55006214300en_US
dc.identifier.issnl0003-6951-

Export via OAI-PMH Interface in XML Formats

OR

Export to Other Non-XML Formats