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Article: Nonuniform electric field effects on zener tunneling in semiconductors
Title | Nonuniform electric field effects on zener tunneling in semiconductors |
---|---|
Authors | |
Issue Date | 1974 |
Publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/jpcs |
Citation | Journal Of Physics And Chemistry Of Solids, 1974, v. 35 n. 3, p. 455-460 How to Cite? |
Abstract | Expressions for Zener tunneling probability, which are based on a simple two-band theory and a nonuniform electric-field of the profile ε = ε 0e -ax, are calculated explicitly. It is shown that the magnitude of tunneling probability increases as the penetration depth of the electric field decreases. Also numerical example for InSb is discussed. © 1974 Peragamon Press. |
Persistent Identifier | http://hdl.handle.net/10722/155484 |
ISSN | 2023 Impact Factor: 4.3 2023 SCImago Journal Rankings: 0.703 |
ISI Accession Number ID |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, E | en_US |
dc.date.accessioned | 2012-08-08T08:33:44Z | - |
dc.date.available | 2012-08-08T08:33:44Z | - |
dc.date.issued | 1974 | en_US |
dc.identifier.citation | Journal Of Physics And Chemistry Of Solids, 1974, v. 35 n. 3, p. 455-460 | en_US |
dc.identifier.issn | 0022-3697 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/155484 | - |
dc.description.abstract | Expressions for Zener tunneling probability, which are based on a simple two-band theory and a nonuniform electric-field of the profile ε = ε 0e -ax, are calculated explicitly. It is shown that the magnitude of tunneling probability increases as the penetration depth of the electric field decreases. Also numerical example for InSb is discussed. © 1974 Peragamon Press. | en_US |
dc.language | eng | en_US |
dc.publisher | Pergamon. The Journal's web site is located at http://www.elsevier.com/locate/jpcs | en_US |
dc.relation.ispartof | Journal of Physics and Chemistry of Solids | en_US |
dc.title | Nonuniform electric field effects on zener tunneling in semiconductors | en_US |
dc.type | Article | en_US |
dc.identifier.email | Yang, E:esyang@hkueee.hku.hk | en_US |
dc.identifier.authority | Yang, E=rp00199 | en_US |
dc.description.nature | link_to_subscribed_fulltext | en_US |
dc.identifier.scopus | eid_2-s2.0-49549156942 | en_US |
dc.identifier.volume | 35 | en_US |
dc.identifier.issue | 3 | en_US |
dc.identifier.spage | 455 | en_US |
dc.identifier.epage | 460 | en_US |
dc.identifier.isi | WOS:A1974S360300019 | - |
dc.publisher.place | United Kingdom | en_US |
dc.identifier.scopusauthorid | Yang, E=7202021229 | en_US |
dc.identifier.issnl | 0022-3697 | - |