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Article: Schottky barrier formation by laser irradiation processing

TitleSchottky barrier formation by laser irradiation processing
Authors
Issue Date1980
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1980, v. 37 n. 5, p. 462-463 How to Cite?
AbstractA Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.
Persistent Identifierhttp://hdl.handle.net/10722/155420
ISSN
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID

 

DC FieldValueLanguage
dc.contributor.authorYang, ESen_US
dc.contributor.authorWu, CMen_US
dc.contributor.authorVollmer, HJen_US
dc.contributor.authorSedgewick, TOen_US
dc.contributor.authorHodgson, RTen_US
dc.date.accessioned2012-08-08T08:33:24Z-
dc.date.available2012-08-08T08:33:24Z-
dc.date.issued1980en_US
dc.identifier.citationApplied Physics Letters, 1980, v. 37 n. 5, p. 462-463-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155420-
dc.description.abstractA Schottky barrier is fabricated with a silicon-aluminum-silicon structure by the irradiation of either a pulsed or cw laser. The completed diodes have a large barrier height (1 eV) and good rectifying properties.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titleSchottky barrier formation by laser irradiation processingen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.91965en_US
dc.identifier.scopuseid_2-s2.0-36749116234en_US
dc.identifier.volume37en_US
dc.identifier.issue5en_US
dc.identifier.spage462en_US
dc.identifier.epage463en_US
dc.identifier.isiWOS:A1980KH72100012-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridWu, CM=23032716500en_US
dc.identifier.scopusauthoridVollmer, HJ=7006741240en_US
dc.identifier.scopusauthoridSedgewick, TO=23032602200en_US
dc.identifier.scopusauthoridHodgson, RT=7101648256en_US
dc.identifier.issnl0003-6951-

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