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Article: Peaked schottky-barrier solar cells by Al-Si metallurgical reactions

TitlePeaked schottky-barrier solar cells by Al-Si metallurgical reactions
Authors
Card, HCYang, ESPanayotatos, P
Issue Date1977
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 1977, v. 30 n. 12, p. 643-645 How to Cite?
DOI: http://dx.doi.org/10.1063/1.89269
AbstractThe dark currents in Al-nSi Schottky-barrier solar cells are appreciably reduced by low-temperature heat treatments (T<577°C) which induce metallurgical reactions between the Al and Si. Open-circuit voltages of these cells can be increased by more than 0.2 V as a result of this mechanism.
Persistent Identifierhttp://hdl.handle.net/10722/155418
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:A1977DL10900013

 

DC FieldValueLanguage
dc.contributor.authorCard, HCen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorPanayotatos, Pen_US
dc.date.accessioned2012-08-08T08:33:23Z-
dc.date.available2012-08-08T08:33:23Z-
dc.date.issued1977en_US
dc.identifier.citationApplied Physics Letters, 1977, v. 30 n. 12, p. 643-645-
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/10722/155418-
dc.description.abstractThe dark currents in Al-nSi Schottky-barrier solar cells are appreciably reduced by low-temperature heat treatments (T<577°C) which induce metallurgical reactions between the Al and Si. Open-circuit voltages of these cells can be increased by more than 0.2 V as a result of this mechanism.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_US
dc.relation.ispartofApplied Physics Lettersen_US
dc.titlePeaked schottky-barrier solar cells by Al-Si metallurgical reactionsen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.89269en_US
dc.identifier.scopuseid_2-s2.0-36749111196en_US
dc.identifier.volume30en_US
dc.identifier.issue12en_US
dc.identifier.spage643en_US
dc.identifier.epage645en_US
dc.identifier.isiWOS:A1977DL10900013-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridCard, HC=7004748017en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridPanayotatos, P=7004244750en_US
dc.identifier.issnl0003-6951-

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