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Article: Analysis on hydrogen-sensitive characteristics of Schottky sensor with N2O-grown oxynitride as gate insulator

TitleAnalysis on hydrogen-sensitive characteristics of Schottky sensor with N2O-grown oxynitride as gate insulator
Authors
Han, BXu, JPLai, PTLi, YP
KeywordsGas sensor
Metal-Insulator-SiC (MISiC)
Oxynitride
Schottky barrier diode (SBD)
Issue Date2004
Citation
Chinese Journal Of Sensors And Actuators, 2004, v. 17 n. 2, p. 285-288 How to Cite?
AbstractA metal-insulator-n-type 6H-silicon carbide (MISiC) Schottky-barrier-diode (SBD) gas sensor with thin N*2 O-grown oxynitride as gate insulator has been fabricated and studied. The results show that the N2O-grown technique improves the interface properties between the gate insulator and the substrate and hence the sensor performance. Thus, it is suitable for long time working under harsh environments, e.g., an operating temperature of 300°C. And increasing the insulator thickness properly helps to improve the sensitivity and reliability of the sensor.
Persistent Identifierhttp://hdl.handle.net/10722/155271
ISSN
1004-1699
2023 SCImago Journal Rankings: 0.141
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorHan, Ben_HK
dc.contributor.authorXu, JPen_HK
dc.contributor.authorLai, PTen_HK
dc.contributor.authorLi, YPen_HK
dc.date.accessioned2012-08-08T08:32:38Z-
dc.date.available2012-08-08T08:32:38Z-
dc.date.issued2004en_HK
dc.identifier.citationChinese Journal Of Sensors And Actuators, 2004, v. 17 n. 2, p. 285-288en_HK
dc.identifier.issn1004-1699en_HK
dc.identifier.urihttp://hdl.handle.net/10722/155271-
dc.description.abstractA metal-insulator-n-type 6H-silicon carbide (MISiC) Schottky-barrier-diode (SBD) gas sensor with thin N*2 O-grown oxynitride as gate insulator has been fabricated and studied. The results show that the N2O-grown technique improves the interface properties between the gate insulator and the substrate and hence the sensor performance. Thus, it is suitable for long time working under harsh environments, e.g., an operating temperature of 300°C. And increasing the insulator thickness properly helps to improve the sensitivity and reliability of the sensor.en_HK
dc.languageengen_US
dc.relation.ispartofChinese Journal of Sensors and Actuatorsen_HK
dc.subjectGas sensoren_HK
dc.subjectMetal-Insulator-SiC (MISiC)en_HK
dc.subjectOxynitrideen_HK
dc.subjectSchottky barrier diode (SBD)en_HK
dc.titleAnalysis on hydrogen-sensitive characteristics of Schottky sensor with N2O-grown oxynitride as gate insulatoren_HK
dc.typeArticleen_HK
dc.identifier.emailXu, JP: jpxu@eee.hku.hken_HK
dc.identifier.emailLai, PT: laip@eee.hku.hken_HK
dc.identifier.authorityXu, JP=rp00197en_HK
dc.identifier.authorityLai, PT=rp00130en_HK
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-19544375262en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-19544375262&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume17en_HK
dc.identifier.issue2en_HK
dc.identifier.spage285en_HK
dc.identifier.epage288en_HK
dc.identifier.scopusauthoridHan, B=7401726428en_HK
dc.identifier.scopusauthoridXu, JP=7407004696en_HK
dc.identifier.scopusauthoridLai, PT=7202946460en_HK
dc.identifier.scopusauthoridLi, YP=8704252400en_HK
dc.identifier.issnl1004-1699-

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