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Article: A novel fabrication method for a 64 × 64 matrix-addressable GaN-based micro-LED array

TitleA novel fabrication method for a 64 × 64 matrix-addressable GaN-based micro-LED array
Authors
Jeon, CWChoi, HWDawson, MD
Issue Date2003
Citation
Physica Status Solidi (A) Applied Research, 2003, v. 200 n. 1, p. 79-82 How to Cite?
DOI: http://dx.doi.org/10.1002/pssa.200303292
AbstractThe fabrication and performance of GaN-based micro-light emitting diode (μ-LED) arrays with 64 × 64 elements is reported. The diameter of each element is 20 μm and center-to-center spacing 30 μm, giving an overall active area of the arrays of 80425 μm2. Through a novel fabrication approach including a isotropic dry etching and a self-aligned isolation technique, we could easily obtain an interconnection for a matrix-addressable array device. The arrays emit >50 μW per element at 3 mA drive current. Adopting a spreading metal as a p-contact, the turn-on voltage was lowered down to 3.4 V.
Persistent Identifierhttp://hdl.handle.net/10722/155237
ISSN
0031-8965
ISI Accession Number ID
WOS:000187234600018
References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorJeon, CWen_US
dc.contributor.authorChoi, HWen_US
dc.contributor.authorDawson, MDen_US
dc.date.accessioned2012-08-08T08:32:29Z-
dc.date.available2012-08-08T08:32:29Z-
dc.date.issued2003en_US
dc.identifier.citationPhysica Status Solidi (A) Applied Research, 2003, v. 200 n. 1, p. 79-82en_US
dc.identifier.issn0031-8965en_US
dc.identifier.urihttp://hdl.handle.net/10722/155237-
dc.description.abstractThe fabrication and performance of GaN-based micro-light emitting diode (μ-LED) arrays with 64 × 64 elements is reported. The diameter of each element is 20 μm and center-to-center spacing 30 μm, giving an overall active area of the arrays of 80425 μm2. Through a novel fabrication approach including a isotropic dry etching and a self-aligned isolation technique, we could easily obtain an interconnection for a matrix-addressable array device. The arrays emit >50 μW per element at 3 mA drive current. Adopting a spreading metal as a p-contact, the turn-on voltage was lowered down to 3.4 V.en_US
dc.languageengen_US
dc.relation.ispartofPhysica Status Solidi (A) Applied Researchen_US
dc.titleA novel fabrication method for a 64 × 64 matrix-addressable GaN-based micro-LED arrayen_US
dc.typeArticleen_US
dc.identifier.emailChoi, HW:hwchoi@eee.hku.hken_US
dc.identifier.authorityChoi, HW=rp00108en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1002/pssa.200303292en_US
dc.identifier.scopuseid_2-s2.0-0348146366en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-0348146366&selection=ref&src=s&origin=recordpageen_US
dc.identifier.volume200en_US
dc.identifier.issue1en_US
dc.identifier.spage79en_US
dc.identifier.epage82en_US
dc.identifier.isiWOS:000187234600018-
dc.identifier.scopusauthoridJeon, CW=7006894315en_US
dc.identifier.scopusauthoridChoi, HW=7404334877en_US
dc.identifier.scopusauthoridDawson, MD=7203061779en_US
dc.identifier.issnl0031-8965-

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