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Article: Wavelength dependence in photosynthesis of porous silicon dot

TitleWavelength dependence in photosynthesis of porous silicon dot
Authors
Cheah, KWChoy, CH
Issue Date1994
PublisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/ssc
Citation
Solid State Communications, 1994, v. 91 n. 10, p. 795-797 How to Cite?
AbstractPorous silicon dot was fabricated by laser induced etching of single crystal silicon wafer immersed in hydrofluoric solution. The result shows that there is strong photo-chemical reaction on the laser irradiated silicon surface. Various incident wavelengths have been used to fabricate the porous silicon dots. It is found that there is a significant shift in photoluminescence peak when using infra-red light as etching wavelength. We proposed that there are two possible mechanisms responsible for the shift; one is electronic and the other is photo-chemical. © 1994.
Persistent Identifierhttp://hdl.handle.net/10722/155005
ISSN
0038-1098
2023 Impact Factor: 2.1
2023 SCImago Journal Rankings: 0.414
ISI Accession Number ID
WOS:A1994PF30500006

 

DC FieldValueLanguage
dc.contributor.authorCheah, KWen_US
dc.contributor.authorChoy, CHen_US
dc.date.accessioned2012-08-08T08:31:28Z-
dc.date.available2012-08-08T08:31:28Z-
dc.date.issued1994en_US
dc.identifier.citationSolid State Communications, 1994, v. 91 n. 10, p. 795-797en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://hdl.handle.net/10722/155005-
dc.description.abstractPorous silicon dot was fabricated by laser induced etching of single crystal silicon wafer immersed in hydrofluoric solution. The result shows that there is strong photo-chemical reaction on the laser irradiated silicon surface. Various incident wavelengths have been used to fabricate the porous silicon dots. It is found that there is a significant shift in photoluminescence peak when using infra-red light as etching wavelength. We proposed that there are two possible mechanisms responsible for the shift; one is electronic and the other is photo-chemical. © 1994.en_US
dc.languageengen_US
dc.publisherPergamon. The Journal's web site is located at http://www.elsevier.com/locate/sscen_US
dc.relation.ispartofSolid State Communicationsen_US
dc.titleWavelength dependence in photosynthesis of porous silicon doten_US
dc.typeArticleen_US
dc.identifier.emailChoy, CH:chchoy@eee.hku.hken_US
dc.identifier.authorityChoy, CH=rp00218en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0028495866en_US
dc.identifier.volume91en_US
dc.identifier.issue10en_US
dc.identifier.spage795en_US
dc.identifier.epage797en_US
dc.identifier.isiWOS:A1994PF30500006-
dc.publisher.placeUnited Kingdomen_US
dc.identifier.scopusauthoridCheah, KW=7102792922en_US
dc.identifier.scopusauthoridChoy, CH=7006202371en_US
dc.identifier.issnl0038-1098-

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