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Article: Dependence of electrical characteristics on laser power in cw laser processed Al-nSi diodes

TitleDependence of electrical characteristics on laser power in cw laser processed Al-nSi diodes
Authors
Wu, CMYang, ESSedgwick, TOHodgson, RT
Issue Date1981
PublisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp
Citation
Journal of Applied Physics, 1981, v. 52 n. 12, p. 7287-7290 How to Cite?
DOI: http://dx.doi.org/10.1063/1.328716
AbstractWe report here data of the capacitance-voltage and current-voltage measurements on cw laser processed Al-nSi diodes. The range of the laser power is between 12 and 20 W. Significant changes in the ideality factor, reverse saturation current, thermal activation energy, doping concentration, and effective Schottky barrier height have been observed. These results appear to be consistent with the mechanisms of aluminum diffusion and defect generation with high-temperature stress under high-power laser irradiation.
Persistent Identifierhttp://hdl.handle.net/10722/154812
ISSN
0021-8979
2023 Impact Factor: 2.7
2023 SCImago Journal Rankings: 0.649
ISI Accession Number ID
WOS:A1981MT07800041

 

DC FieldValueLanguage
dc.contributor.authorWu, CMen_US
dc.contributor.authorYang, ESen_US
dc.contributor.authorSedgwick, TOen_US
dc.contributor.authorHodgson, RTen_US
dc.date.accessioned2012-08-08T08:30:46Z-
dc.date.available2012-08-08T08:30:46Z-
dc.date.issued1981en_US
dc.identifier.citationJournal of Applied Physics, 1981, v. 52 n. 12, p. 7287-7290-
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://hdl.handle.net/10722/154812-
dc.description.abstractWe report here data of the capacitance-voltage and current-voltage measurements on cw laser processed Al-nSi diodes. The range of the laser power is between 12 and 20 W. Significant changes in the ideality factor, reverse saturation current, thermal activation energy, doping concentration, and effective Schottky barrier height have been observed. These results appear to be consistent with the mechanisms of aluminum diffusion and defect generation with high-temperature stress under high-power laser irradiation.en_US
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jspen_US
dc.relation.ispartofJournal of Applied Physicsen_US
dc.titleDependence of electrical characteristics on laser power in cw laser processed Al-nSi diodesen_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.doi10.1063/1.328716en_US
dc.identifier.scopuseid_2-s2.0-0019698634en_US
dc.identifier.volume52en_US
dc.identifier.issue12en_US
dc.identifier.spage7287en_US
dc.identifier.epage7290en_US
dc.identifier.isiWOS:A1981MT07800041-
dc.publisher.placeUnited Statesen_US
dc.identifier.scopusauthoridWu, CM=23032716500en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US
dc.identifier.scopusauthoridSedgwick, TO=7003309218en_US
dc.identifier.scopusauthoridHodgson, RT=7101648256en_US
dc.identifier.issnl0021-8979-

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