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Article: STUDY OF POLY-Si GRAIN BOUNDARIES USING SCHOTTKY BARRIERS.

TitleSTUDY OF POLY-Si GRAIN BOUNDARIES USING SCHOTTKY BARRIERS.
Authors
Wu, CMYang, ES
Issue Date1979
Citation
Advances In Chemistry Series, 1979, p. 435-438 How to Cite?
AbstractSchottky barrier diodes using aluminum on p-type polycrystalline silicon have been fabricated. The contrast of the orientation of neighboring grains is observed after chemical etching of the surface. It is found that the low-angle boundary has little effect on the I-V characteristics since near ideal Schottky-I-V curves are obtained. The high-angle grain boundary, however, significantly alters both the I-V and low-frequency C-V plots.
Persistent Identifierhttp://hdl.handle.net/10722/154798

 

DC FieldValueLanguage
dc.contributor.authorWu, CMen_US
dc.contributor.authorYang, ESen_US
dc.date.accessioned2012-08-08T08:30:43Z-
dc.date.available2012-08-08T08:30:43Z-
dc.date.issued1979en_US
dc.identifier.citationAdvances In Chemistry Series, 1979, p. 435-438en_US
dc.identifier.urihttp://hdl.handle.net/10722/154798-
dc.description.abstractSchottky barrier diodes using aluminum on p-type polycrystalline silicon have been fabricated. The contrast of the orientation of neighboring grains is observed after chemical etching of the surface. It is found that the low-angle boundary has little effect on the I-V characteristics since near ideal Schottky-I-V curves are obtained. The high-angle grain boundary, however, significantly alters both the I-V and low-frequency C-V plots.en_US
dc.languageengen_US
dc.relation.ispartofAdvances in Chemistry Seriesen_US
dc.titleSTUDY OF POLY-Si GRAIN BOUNDARIES USING SCHOTTKY BARRIERS.en_US
dc.typeArticleen_US
dc.identifier.emailYang, ES:esyang@hkueee.hku.hken_US
dc.identifier.authorityYang, ES=rp00199en_US
dc.description.naturelink_to_subscribed_fulltexten_US
dc.identifier.scopuseid_2-s2.0-0018683720en_US
dc.identifier.spage435en_US
dc.identifier.epage438en_US
dc.identifier.scopusauthoridWu, CM=23032716500en_US
dc.identifier.scopusauthoridYang, ES=7202021229en_US

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