Microwave BARITT diode with retarding field-An investigation

Abstract

Studies have been made on a new n+ipvn+ reach through structure operated as a BARITT diode. Unlike earlier BARITT structures, the present one has an additional region (the i-layer) added to it so as to provide a longer retarding field region. By taking advantage of the carrier diffusion at low velocities against an opposing field in this region, the injected current may be delayed relative to the a.c. voltage and improved efficiency BARITT diodes can be expected. In this paper, a one dimensional model is used to illustrate the basic operating mode and advantages of the structure. A d.c. analysis is performed and expressions for the reach through voltage and, critical voltage at which the space charge effects of the injected carriers become apparent are obtained. Furthermore an a.c. analysis is made and a relation for the transit time delay in the retarding field region is developed. © 1977.