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Conference Paper: Nanoscale manipulation of BiFeO3 multipolorizaion switching modes utilizing SPM tip
Title | Nanoscale manipulation of BiFeO3 multipolorizaion switching modes utilizing SPM tip |
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Authors | |
Issue Date | 2011 |
Publisher | Materials Research Society. |
Citation | The International Conference on Materials for Advanced Technologies (ICMAT 2011), Singapore, 26 June-1 July 2011. In Proceedings of ICMAT, 2011, v. H, p. 49 How to Cite? |
Abstract | An anisotropic mechanism has been developed to investigate the complex multipolarization switching in epitaxial BiFeO3 films, under a biased-SPM-tip field. Switching inhomogeneity and domain wall width evolution have been specifically accounted for in the model developed. It has been found that distinct switching modes, i.e., the breakdown mode of 71°-switched domain and activation mode of 180°/109° switching, exist and dominate switching orders over polarization reversal. Our predicted switching sequences show excellent agreements with the existing experimental data and phase-field results. A procedure is proposed by precisely manipulating temporal tip-bias to fabricate single-phase 71° ferroelastic domain-array of controllable density using (001) BiFeO3 films, which is practically favored to significantly enhance the magnetoelectric coupling and photovoltage. |
Description | Symposium H - Nanodevices and Nanofabrication: ICMAT11-A-0715 |
Persistent Identifier | http://hdl.handle.net/10722/153089 |
ISBN |
DC Field | Value | Language |
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dc.contributor.author | Shi, Y | en_US |
dc.contributor.author | Soh, AK | en_US |
dc.date.accessioned | 2012-07-16T09:56:12Z | - |
dc.date.available | 2012-07-16T09:56:12Z | - |
dc.date.issued | 2011 | en_US |
dc.identifier.citation | The International Conference on Materials for Advanced Technologies (ICMAT 2011), Singapore, 26 June-1 July 2011. In Proceedings of ICMAT, 2011, v. H, p. 49 | en_US |
dc.identifier.isbn | 978-981-08-8878-7 | en_US |
dc.identifier.uri | http://hdl.handle.net/10722/153089 | - |
dc.description | Symposium H - Nanodevices and Nanofabrication: ICMAT11-A-0715 | - |
dc.description.abstract | An anisotropic mechanism has been developed to investigate the complex multipolarization switching in epitaxial BiFeO3 films, under a biased-SPM-tip field. Switching inhomogeneity and domain wall width evolution have been specifically accounted for in the model developed. It has been found that distinct switching modes, i.e., the breakdown mode of 71°-switched domain and activation mode of 180°/109° switching, exist and dominate switching orders over polarization reversal. Our predicted switching sequences show excellent agreements with the existing experimental data and phase-field results. A procedure is proposed by precisely manipulating temporal tip-bias to fabricate single-phase 71° ferroelastic domain-array of controllable density using (001) BiFeO3 films, which is practically favored to significantly enhance the magnetoelectric coupling and photovoltage. | - |
dc.language | eng | en_US |
dc.publisher | Materials Research Society. | en_US |
dc.relation.ispartof | Proceedings of International Conference on Materials for Advanced Technologies | en_US |
dc.rights | Proceedings of International Conference on Materials for Advanced Technologies. Copyright © Materials Research Society. | en_US |
dc.title | Nanoscale manipulation of BiFeO3 multipolorizaion switching modes utilizing SPM tip | en_US |
dc.type | Conference_Paper | en_US |
dc.identifier.openurl | http://library.hku.hk:4550/resserv?sid=HKU:IR&issn=978-981-08-8878-7&volume=H&spage=49&epage=&date=2011&atitle=Nanoscale+manipulation+of+BiFeO3+multipolarization+switching+modes+utilizing+SPM+Tip | en_US |
dc.identifier.email | Soh, AK: aksoh@hku.hk | en_US |
dc.identifier.authority | Soh, AK=rp00170 | en_US |
dc.description.nature | link_to_OA_fulltext | - |
dc.identifier.hkuros | 200542 | en_US |
dc.identifier.volume | H | en_US |
dc.identifier.spage | 49 | en_US |
dc.identifier.epage | 49 | en_US |
dc.publisher.place | Singapore | - |
dc.description.other | The International Conference on Materials for Advanced Technologies (ICMAT 2011), Singapore, 26 June-1 July 2011. In Proceedings of ICMAT, 2011, v. H, p. 49 | - |