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Article: Quantum blockade and loop current induced by a single lattice defect in graphene nanoribbons
Title | Quantum blockade and loop current induced by a single lattice defect in graphene nanoribbons |
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Authors | |
Issue Date | 2009 |
Publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ |
Citation | Physical Review B (Condensed Matter and Materials Physics), 2009, v. 79 n. 11, article no. 115403 How to Cite? |
Abstract | We investigate theoretically the electronic transport properties in narrow graphene ribbons with an adatom-induced defect. It is found that the lowest conductance step of a metallic graphene nanoribbon may develop a dip even down to zero at certain values of the Fermi energy due to the defect. Accompanying the occurrence of the conductance dip, a loop current develops around the defect. We show how the properties of the conductance dip depend on the parameters of the defect such as the relative position and severity of the defect as well as the width and edges of the graphene ribbons. In particular, for metallic armchair-edges graphene nanoribbons, whether the conductance dip appears or not, they can be controlled by choosing the position of the single defect. © 2009 The American Physical Society. |
Persistent Identifier | http://hdl.handle.net/10722/147668 |
ISSN | 2014 Impact Factor: 3.736 |
ISI Accession Number ID | |
References |
DC Field | Value | Language |
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dc.contributor.author | Yan, JY | en_HK |
dc.contributor.author | Zhang, P | en_HK |
dc.contributor.author | Sun, B | en_HK |
dc.contributor.author | Lu, HZ | en_HK |
dc.contributor.author | Wang, Z | en_HK |
dc.contributor.author | Duan, S | en_HK |
dc.contributor.author | Zhao, XG | en_HK |
dc.date.accessioned | 2012-05-29T06:07:38Z | - |
dc.date.available | 2012-05-29T06:07:38Z | - |
dc.date.issued | 2009 | en_HK |
dc.identifier.citation | Physical Review B (Condensed Matter and Materials Physics), 2009, v. 79 n. 11, article no. 115403 | - |
dc.identifier.issn | 1098-0121 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/147668 | - |
dc.description.abstract | We investigate theoretically the electronic transport properties in narrow graphene ribbons with an adatom-induced defect. It is found that the lowest conductance step of a metallic graphene nanoribbon may develop a dip even down to zero at certain values of the Fermi energy due to the defect. Accompanying the occurrence of the conductance dip, a loop current develops around the defect. We show how the properties of the conductance dip depend on the parameters of the defect such as the relative position and severity of the defect as well as the width and edges of the graphene ribbons. In particular, for metallic armchair-edges graphene nanoribbons, whether the conductance dip appears or not, they can be controlled by choosing the position of the single defect. © 2009 The American Physical Society. | en_HK |
dc.language | eng | en_US |
dc.publisher | American Physical Society. The Journal's web site is located at http://prb.aps.org/ | en_HK |
dc.relation.ispartof | Physical Review B (Condensed Matter and Materials Physics) | - |
dc.rights | Copyright 2009 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevB.79.115403 | - |
dc.title | Quantum blockade and loop current induced by a single lattice defect in graphene nanoribbons | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Lu, HZ: luhz@hku.hk | en_HK |
dc.identifier.authority | Lu, HZ=rp01599 | en_HK |
dc.description.nature | published_or_final_version | en_US |
dc.identifier.doi | 10.1103/PhysRevB.79.115403 | en_HK |
dc.identifier.scopus | eid_2-s2.0-63149108584 | en_HK |
dc.identifier.hkuros | 242122 | - |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-63149108584&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 79 | en_HK |
dc.identifier.issue | 11 | en_HK |
dc.identifier.spage | article no. 115403 | - |
dc.identifier.epage | article no. 115403 | - |
dc.identifier.isi | WOS:000264768900110 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | Yan, JY=23991981700 | en_HK |
dc.identifier.scopusauthorid | Zhang, P=35328811200 | en_HK |
dc.identifier.scopusauthorid | Sun, B=7401984457 | en_HK |
dc.identifier.scopusauthorid | Lu, HZ=24376662200 | en_HK |
dc.identifier.scopusauthorid | Wang, Z=16744725900 | en_HK |
dc.identifier.scopusauthorid | Duan, S=7102434764 | en_HK |
dc.identifier.scopusauthorid | Zhao, XG=7407576881 | en_HK |
dc.identifier.issnl | 1098-0121 | - |