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Article: Resonant intrinsic spin hall effect in p-type GaAs quantum well structure

TitleResonant intrinsic spin hall effect in p-type GaAs quantum well structure
Authors
KeywordsLuttinger hamiltonian
Spin hall conductance
Spin hall effect
Electron energy levels
Hamiltonians
Issue Date2006
PublisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.org
Citation
Physical Review Letters, 2006, v. 96 n. 8, article no. 086802 How to Cite?
AbstractWe study intrinsic spin Hall effect in p-type GaAs quantum well structure described by Luttinger Hamiltonian and a Rashba spin-orbit coupling arising from the structural inversion symmetry breaking. The Rashba term induces an energy level crossing in the lowest heavy hole subband, which gives rise to a resonant spin Hall conductance. The resonance may be used to identify the intrinsic spin Hall effect in experiments. © 2006 The American Physical Society.
Persistent Identifierhttp://hdl.handle.net/10722/146333
ISSN
2021 Impact Factor: 9.185
2020 SCImago Journal Rankings: 3.688
ISI Accession Number ID
References

 

DC FieldValueLanguage
dc.contributor.authorDai, Xen_HK
dc.contributor.authorFang, Zen_HK
dc.contributor.authorYao, YGen_HK
dc.contributor.authorZhang, FCen_HK
dc.date.accessioned2012-04-17T07:38:57Z-
dc.date.available2012-04-17T07:38:57Z-
dc.date.issued2006en_HK
dc.identifier.citationPhysical Review Letters, 2006, v. 96 n. 8, article no. 086802-
dc.identifier.issn0031-9007en_HK
dc.identifier.urihttp://hdl.handle.net/10722/146333-
dc.description.abstractWe study intrinsic spin Hall effect in p-type GaAs quantum well structure described by Luttinger Hamiltonian and a Rashba spin-orbit coupling arising from the structural inversion symmetry breaking. The Rashba term induces an energy level crossing in the lowest heavy hole subband, which gives rise to a resonant spin Hall conductance. The resonance may be used to identify the intrinsic spin Hall effect in experiments. © 2006 The American Physical Society.en_HK
dc.languageeng-
dc.publisherAmerican Physical Society. The Journal's web site is located at http://prl.aps.orgen_HK
dc.relation.ispartofPhysical Review Lettersen_HK
dc.rightsCopyright 2006 by The American Physical Society. This article is available online at https://doi.org/10.1103/PhysRevLett.96.086802-
dc.subjectLuttinger hamiltonian-
dc.subjectSpin hall conductance-
dc.subjectSpin hall effect-
dc.subjectElectron energy levels-
dc.subjectHamiltonians-
dc.titleResonant intrinsic spin hall effect in p-type GaAs quantum well structureen_HK
dc.typeArticleen_HK
dc.identifier.emailZhang, FC: fuchun@hkucc.hku.hken_HK
dc.identifier.authorityZhang, FC=rp00840en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1103/PhysRevLett.96.086802en_HK
dc.identifier.scopuseid_2-s2.0-33644543759en_HK
dc.identifier.hkuros116735-
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-33644543759&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume96en_HK
dc.identifier.issue8en_HK
dc.identifier.spagearticle no. 086802-
dc.identifier.epagearticle no. 086802-
dc.identifier.isiWOS:000235736200057-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridDai, X=9842770600en_HK
dc.identifier.scopusauthoridFang, Z=7402681557en_HK
dc.identifier.scopusauthoridYao, YG=9241909200en_HK
dc.identifier.scopusauthoridZhang, FC=14012468800en_HK
dc.identifier.issnl0031-9007-

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