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Article: Indium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition

TitleIndium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition
Authors
Fung, MKWong, KKChen, XYChan, YFNg, AMCDjurišić, ABChan, WK
KeywordsITO
Metal oxide
Nanowires
Issue Date2012
PublisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/cap
Citation
Current Applied Physics, 2012, v. 12 n. 3, p. 697-706 How to Cite?
DOI: http://dx.doi.org/10.1016/j.cap.2011.10.006
AbstractIndium oxide, tin oxide and indium tin oxide nanowires have been grown by vapor deposition on Si and quartz substrates. Under the growth conditions used, pure SiO x nanowires, a mixture of SiO x and indium oxide, tin oxide or indium tin oxide nanostructures, or pure indium oxide, tin oxide or indium tin oxide nanostructures could be obtained at different substrate temperatures. The growth mechanism of the obtained nanostructures at different substrate temperatures is discussed. Optical and electrical properties of the deposited pure indium oxide, tin oxide or indium tin oxide nanostructures have been measured, and low sheet resistances on quartz substrates have been obtained for indium oxide and indium tin oxide nanostructures. © 2011 Elsevier B.V. All rights reserved.
Persistent Identifierhttp://hdl.handle.net/10722/145872
ISSN
1567-1739
2023 Impact Factor: 2.4
2023 SCImago Journal Rankings: 0.511
ISI Accession Number ID
WOS:000300715000017
Funding AgencyGrant Number
Strategic Research Theme, University Development Fund, Seed Funding Grant
RGC GRFHKU 701910
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant and RGC GRF grant HKU 701910 are acknowledged.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorFung, MKen_HK
dc.contributor.authorWong, KKen_HK
dc.contributor.authorChen, XYen_HK
dc.contributor.authorChan, YFen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorChan, WKen_HK
dc.date.accessioned2012-03-27T08:56:05Z-
dc.date.available2012-03-27T08:56:05Z-
dc.date.issued2012en_HK
dc.identifier.citationCurrent Applied Physics, 2012, v. 12 n. 3, p. 697-706en_HK
dc.identifier.issn1567-1739en_HK
dc.identifier.urihttp://hdl.handle.net/10722/145872-
dc.description.abstractIndium oxide, tin oxide and indium tin oxide nanowires have been grown by vapor deposition on Si and quartz substrates. Under the growth conditions used, pure SiO x nanowires, a mixture of SiO x and indium oxide, tin oxide or indium tin oxide nanostructures, or pure indium oxide, tin oxide or indium tin oxide nanostructures could be obtained at different substrate temperatures. The growth mechanism of the obtained nanostructures at different substrate temperatures is discussed. Optical and electrical properties of the deposited pure indium oxide, tin oxide or indium tin oxide nanostructures have been measured, and low sheet resistances on quartz substrates have been obtained for indium oxide and indium tin oxide nanostructures. © 2011 Elsevier B.V. All rights reserved.en_HK
dc.languageengen_US
dc.publisherElsevier BV. The Journal's web site is located at http://www.elsevier.com/locate/capen_HK
dc.relation.ispartofCurrent Applied Physicsen_HK
dc.subjectITOen_HK
dc.subjectMetal oxideen_HK
dc.subjectNanowiresen_HK
dc.titleIndium oxide, tin oxide and indium tin oxide nanostructure growth by vapor depositionen_HK
dc.typeArticleen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1016/j.cap.2011.10.006en_HK
dc.identifier.scopuseid_2-s2.0-84857452621en_HK
dc.identifier.hkuros203600en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-84857452621&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume12en_HK
dc.identifier.issue3en_HK
dc.identifier.spage697en_HK
dc.identifier.epage706en_HK
dc.identifier.isiWOS:000300715000017-
dc.publisher.placeNetherlandsen_HK
dc.identifier.scopusauthoridFung, MK=35191896100en_HK
dc.identifier.scopusauthoridWong, KK=37056419600en_HK
dc.identifier.scopusauthoridChen, XY=35182594600en_HK
dc.identifier.scopusauthoridChan, YF=8414594300en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridChan, WK=7403917961en_HK
dc.identifier.citeulike9946840-
dc.identifier.issnl1567-1739-

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