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Article: Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering
Title | Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering | ||||||
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Authors | |||||||
Issue Date | 2011 | ||||||
Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | ||||||
Citation | Journal of Applied Physics, 2011, v. 110 n. 11, article no. 113521 How to Cite? | ||||||
Abstract | Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 C. Post-growth annealing in air was carried out up to a temperature of 1000 C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 10 17cm -3 at the annealing temperature of 600 C. The origin of the p-type conductivity was consistent with the As Zn(V Zn) 2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As Zn(V Zn) 2 acceptor and the creation of the deep level defect giving rise to the green luminescence. © 2011 American Institute of Physics. | ||||||
Persistent Identifier | http://hdl.handle.net/10722/145575 | ||||||
ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 | ||||||
ISI Accession Number ID |
Funding Information: This work was financially supported by the Research Grant Council HKSAR through the General Research Fund (GRF) (HKU7031/08P and HKU7021/10P) and The University of Hong Kong's University Development Fund (UDF) and Small Project Grant. | ||||||
References |
DC Field | Value | Language |
---|---|---|
dc.contributor.author | To, CK | en_HK |
dc.contributor.author | Yang, B | en_HK |
dc.contributor.author | Su, SC | en_HK |
dc.contributor.author | Ling, CC | en_HK |
dc.contributor.author | Beling, CD | en_HK |
dc.contributor.author | Fung, S | en_HK |
dc.date.accessioned | 2012-02-28T01:55:38Z | - |
dc.date.available | 2012-02-28T01:55:38Z | - |
dc.date.issued | 2011 | en_HK |
dc.identifier.citation | Journal of Applied Physics, 2011, v. 110 n. 11, article no. 113521 | - |
dc.identifier.issn | 0021-8979 | en_HK |
dc.identifier.uri | http://hdl.handle.net/10722/145575 | - |
dc.description.abstract | Arsenic-doped ZnO films were fabricated by radio frequency magnetron sputtering method at a relatively low substrate temperature of 200 C. Post-growth annealing in air was carried out up to a temperature of 1000 C. The samples were characterized by Hall measurement, positron annihilation spectroscopy (PAS), secondary ion mass spectroscopy (SIMS), and cathodoluminescence (CL). The as-grown sample was of n-type and it converted to p-type material after the 400 C annealing. The resulting hole concentration was found to increase with annealing temperature and reached a maximum of 6 10 17cm -3 at the annealing temperature of 600 C. The origin of the p-type conductivity was consistent with the As Zn(V Zn) 2 shallow acceptor model. Further increasing the annealing temperature would decrease the hole concentration of the samples finally converted the sample back to n-type. With evidence, it was suggested that the removal of the p-type conductivity was due to the dissociation of the As Zn(V Zn) 2 acceptor and the creation of the deep level defect giving rise to the green luminescence. © 2011 American Institute of Physics. | en_HK |
dc.language | eng | en_US |
dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
dc.relation.ispartof | Journal of Applied Physics | en_HK |
dc.rights | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2011, v. 110 n. 11, article no. 113521 and may be found at https://doi.org/10.1063/1.3665713 | - |
dc.title | Post-growth annealing induced change of conductivity in As-doped ZnO grown by radio frequency magnetron sputtering | en_HK |
dc.type | Article | en_HK |
dc.identifier.email | Ling, CC: ccling@hkucc.hku.hk | en_HK |
dc.identifier.email | Beling, CD: cdbeling@hkucc.hku.hk | en_HK |
dc.identifier.email | Fung, S: sfung@hku.hk | en_HK |
dc.identifier.authority | Ling, CC=rp00747 | en_HK |
dc.identifier.authority | Beling, CD=rp00660 | en_HK |
dc.identifier.authority | Fung, S=rp00695 | en_HK |
dc.description.nature | published_or_final_version | - |
dc.identifier.doi | 10.1063/1.3665713 | en_HK |
dc.identifier.scopus | eid_2-s2.0-84858604130 | en_HK |
dc.identifier.hkuros | 198651 | en_US |
dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-84858604130&selection=ref&src=s&origin=recordpage | en_HK |
dc.identifier.volume | 110 | en_HK |
dc.identifier.issue | 11 | en_HK |
dc.identifier.spage | article no. 113521 | - |
dc.identifier.epage | article no. 113521 | - |
dc.identifier.eissn | 1089-7550 | - |
dc.identifier.isi | WOS:000298254800042 | - |
dc.publisher.place | United States | en_HK |
dc.identifier.scopusauthorid | To, CK=35114056600 | en_HK |
dc.identifier.scopusauthorid | Yang, B=55416326500 | en_HK |
dc.identifier.scopusauthorid | Su, SC=24438412700 | en_HK |
dc.identifier.scopusauthorid | Ling, CC=13310239300 | en_HK |
dc.identifier.scopusauthorid | Beling, CD=7005864180 | en_HK |
dc.identifier.scopusauthorid | Fung, S=7201970040 | en_HK |
dc.identifier.issnl | 0021-8979 | - |