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Article: Growth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaNSi heterojunctions
| Title | Growth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaNSi heterojunctions | ||||
|---|---|---|---|---|---|
| Authors | |||||
| Keywords | Amorphous-like Crystallinities Epifilms Gan film Growth conditions | ||||
| Issue Date | 2011 | ||||
| Publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | ||||
| Citation | Journal of Applied Physics, 2011, v. 110 n. 9, article no. 093514 How to Cite? | ||||
| Abstract | Growths of GaN on Si(111)- (7 × 7) substrates by plasma-assisted molecular-beam epitaxy (PA-MBE) have been studied. Optimal conditions of MBE and the effect of a lowerature (LT) buffer are followed. It is found that irrespective of the growth conditions and the growth strategies (direct versus two-step growth), a thin amorphous-like interface layer always forms. For smooth surfaces and better crystallinity of the epifilms, a LT-buffer preceding the higherature deposition is helpful, and the grown GaN films are of nitrogen-polar. Transport measurements of the heterojunctions of GaN on heavily p- and n-doped Si reveal ohmic behavior, whereas that of n-GaN on lightly doped n --Si substrate shows rectifying characteristics. © 2011 American Institute of Physics. | ||||
| Persistent Identifier | http://hdl.handle.net/10722/143782 | ||||
| ISSN | 2023 Impact Factor: 2.7 2023 SCImago Journal Rankings: 0.649 | ||||
| ISI Accession Number ID |
Funding Information: We acknowledge the help from W. K. Ho in the growth and SEM experiment, A. M. C. Ng for electrode making and preliminary transport measurements, and Y.F. Chan for providing the TEM data. This work was financially supported by a grant from the Research Grant Council of the Hong Kong Special Administrative Region, China, under the grant No. 7048/08P. | ||||
| References |
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Xu, Z | en_HK |
| dc.contributor.author | Zhang, L | en_HK |
| dc.contributor.author | He, H | en_HK |
| dc.contributor.author | Wang, J | en_HK |
| dc.contributor.author | Xie, M | en_HK |
| dc.date.accessioned | 2011-12-21T08:55:13Z | - |
| dc.date.available | 2011-12-21T08:55:13Z | - |
| dc.date.issued | 2011 | en_HK |
| dc.identifier.citation | Journal of Applied Physics, 2011, v. 110 n. 9, article no. 093514 | - |
| dc.identifier.issn | 0021-8979 | en_HK |
| dc.identifier.uri | http://hdl.handle.net/10722/143782 | - |
| dc.description.abstract | Growths of GaN on Si(111)- (7 × 7) substrates by plasma-assisted molecular-beam epitaxy (PA-MBE) have been studied. Optimal conditions of MBE and the effect of a lowerature (LT) buffer are followed. It is found that irrespective of the growth conditions and the growth strategies (direct versus two-step growth), a thin amorphous-like interface layer always forms. For smooth surfaces and better crystallinity of the epifilms, a LT-buffer preceding the higherature deposition is helpful, and the grown GaN films are of nitrogen-polar. Transport measurements of the heterojunctions of GaN on heavily p- and n-doped Si reveal ohmic behavior, whereas that of n-GaN on lightly doped n --Si substrate shows rectifying characteristics. © 2011 American Institute of Physics. | en_HK |
| dc.language | eng | en_US |
| dc.publisher | American Institute of Physics. The Journal's web site is located at http://jap.aip.org/jap/staff.jsp | en_HK |
| dc.relation.ispartof | Journal of Applied Physics | en_HK |
| dc.rights | Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 2011, v. 110 n. 9, article no. 093514 and may be found at https://doi.org/10.1063/1.3658850 | - |
| dc.subject | Amorphous-like | - |
| dc.subject | Crystallinities | - |
| dc.subject | Epifilms | - |
| dc.subject | Gan film | - |
| dc.subject | Growth conditions | - |
| dc.title | Growth of GaN on Si(111): Surfaces and crystallinity of the epifilms and the transport behavior of GaNSi heterojunctions | en_HK |
| dc.type | Article | en_HK |
| dc.identifier.email | Xie, M: mhxie@hku.hk | en_HK |
| dc.identifier.authority | Xie, M=rp00818 | en_HK |
| dc.description.nature | published_or_final_version | - |
| dc.identifier.doi | 10.1063/1.3658850 | en_HK |
| dc.identifier.scopus | eid_2-s2.0-81355142851 | en_HK |
| dc.identifier.hkuros | 198038 | en_US |
| dc.relation.references | http://www.scopus.com/mlt/select.url?eid=2-s2.0-81355142851&selection=ref&src=s&origin=recordpage | en_HK |
| dc.identifier.volume | 110 | en_HK |
| dc.identifier.issue | 9 | en_HK |
| dc.identifier.spage | article no. 093514 | - |
| dc.identifier.epage | article no. 093514 | - |
| dc.identifier.isi | WOS:000297062100030 | - |
| dc.publisher.place | United States | en_HK |
| dc.identifier.scopusauthorid | Xu, Z=25645146500 | en_HK |
| dc.identifier.scopusauthorid | Zhang, L=54416533800 | en_HK |
| dc.identifier.scopusauthorid | He, H=9633178800 | en_HK |
| dc.identifier.scopusauthorid | Wang, J=36599750200 | en_HK |
| dc.identifier.scopusauthorid | Xie, M=7202255416 | en_HK |
| dc.identifier.issnl | 0021-8979 | - |