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Article: Localized surface optical phonon mode in the InGaN/GaN multiple-quantum- wells nanopillars: Raman spectrum and imaging

TitleLocalized surface optical phonon mode in the InGaN/GaN multiple-quantum- wells nanopillars: Raman spectrum and imaging
Authors
Zhu, JHNing, JQZheng, CCXu, SJZhang, SMYang, H
KeywordsConfocal micro-raman
Ingan/gan
Nanopillar
Nanopillars
Phonon mode
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2011, v. 99 n. 11, article no. 113115 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3640233
AbstractAn interesting phonon mode at around 685-705 cm -1 was clearly observed in the Raman spectra of InGaN/GaN multiple-quantum-wells nanopillars with different diameters at room temperature. The Raman peak position of this mode is found to show a distinct dependence on the nanopillar size, which is in well agreement with theoretical calculation of the surface optical (SO) phonon modes of nanopillars. Moreover, this kind of SO phonon was evidenced to be located on the pillar surface by using scanning confocal micro-Raman microscopy. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/143387
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000295034400068
Funding AgencyGrant Number
NSFC61028012
National Basic Research Program of China2007CB936701
Funding Information:

The work described in this paper was supported by the Joint Research Fund for Overseas Chinese, Hong Kong and Macau Scientists of NSFC (Grant No. 61028012) and the National Basic Research Program of China (Grant No. 2007CB936701).

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorZhu, JHen_HK
dc.contributor.authorNing, JQen_HK
dc.contributor.authorZheng, CCen_HK
dc.contributor.authorXu, SJen_HK
dc.contributor.authorZhang, SMen_HK
dc.contributor.authorYang, Hen_HK
dc.date.accessioned2011-11-24T10:04:47Z-
dc.date.available2011-11-24T10:04:47Z-
dc.date.issued2011en_HK
dc.identifier.citationApplied Physics Letters, 2011, v. 99 n. 11, article no. 113115-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/143387-
dc.description.abstractAn interesting phonon mode at around 685-705 cm -1 was clearly observed in the Raman spectra of InGaN/GaN multiple-quantum-wells nanopillars with different diameters at room temperature. The Raman peak position of this mode is found to show a distinct dependence on the nanopillar size, which is in well agreement with theoretical calculation of the surface optical (SO) phonon modes of nanopillars. Moreover, this kind of SO phonon was evidenced to be located on the pillar surface by using scanning confocal micro-Raman microscopy. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2011, v. 99 n. 11, article no. 113115 and may be found at https://doi.org/10.1063/1.3640233-
dc.subjectConfocal micro-raman-
dc.subjectIngan/gan-
dc.subjectNanopillar-
dc.subjectNanopillars-
dc.subjectPhonon mode-
dc.titleLocalized surface optical phonon mode in the InGaN/GaN multiple-quantum- wells nanopillars: Raman spectrum and imagingen_HK
dc.typeArticleen_HK
dc.identifier.emailNing, JQ: ningjq@hkucc.hku.hken_HK
dc.identifier.emailXu, SJ: sjxu@hku.hken_HK
dc.identifier.authorityNing, JQ=rp00769en_HK
dc.identifier.authorityXu, SJ=rp00821en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3640233en_HK
dc.identifier.scopuseid_2-s2.0-80053204433en_HK
dc.identifier.hkuros197780en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-80053204433&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume99en_HK
dc.identifier.issue11en_HK
dc.identifier.spagearticle no. 113115-
dc.identifier.epagearticle no. 113115-
dc.identifier.eissn1077-3118-
dc.identifier.isiWOS:000295034400068-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhu, JH=16418156700en_HK
dc.identifier.scopusauthoridNing, JQ=15845992800en_HK
dc.identifier.scopusauthoridZheng, CC=36926810900en_HK
dc.identifier.scopusauthoridXu, SJ=7404439005en_HK
dc.identifier.scopusauthoridZhang, SM=35309127200en_HK
dc.identifier.scopusauthoridYang, H=35493514000en_HK
dc.identifier.issnl0003-6951-

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