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Article: A two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing al nanocrystals

TitleA two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing al nanocrystals
Authors
Liu, YChen, TPDing, LLi, YBZhang, SFung, S
KeywordsMemory
Nanocrystal
WORM
Issue Date2010
PublisherAmerican Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/
Citation
Journal Of Nanoscience And Nanotechnology, 2010, v. 10 n. 9, p. 5796-5799 How to Cite?
DOI: http://dx.doi.org/10.1166/jnn.2010.2440
AbstractA switching from a high-conduction state to a low-conduction state occurs in an AIN thin film containing Al nanocrystals (nc-AI) when the nc-AI is charged with electrons. The switching is explained in terms of breaking of the conductive percolation paths of the nc-AI as a result of the charging of the nc-AI. A write-once-read many times-memory (WORM) device is demonstrated based on this phenomenon. The device can be switched by charging the nc-AI with a voltage of +10 V for 100 ms, yielding a current ratio of the two memory states of more than 300 at the reading voltage of 1 V. The charged state (i.e., the low-conduction state) remains unchanged after more than 1 x 106 read cycles, and its retention time is predicted to be more than 10 years. © 2010 American.
Persistent Identifierhttp://hdl.handle.net/10722/142460
ISSN
1533-4880
2019 Impact Factor: 1.134
2019 SCImago Journal Rankings: 0.235
ISI Accession Number ID
WOS:000279836400039
Funding AgencyGrant Number
NSFC60806040
National Research Foundation of SingaporeNRF-G-CRP 2007-01
Funding Information:

This work has been financially supported by NSFC under project No.60806040 and the National Research Foundation of Singapore under project No. NRF-G-CRP 2007-01.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorLiu, Yen_HK
dc.contributor.authorChen, TPen_HK
dc.contributor.authorDing, Len_HK
dc.contributor.authorLi, YBen_HK
dc.contributor.authorZhang, Sen_HK
dc.contributor.authorFung, Sen_HK
dc.date.accessioned2011-10-28T02:46:40Z-
dc.date.available2011-10-28T02:46:40Z-
dc.date.issued2010en_HK
dc.identifier.citationJournal Of Nanoscience And Nanotechnology, 2010, v. 10 n. 9, p. 5796-5799en_HK
dc.identifier.issn1533-4880en_HK
dc.identifier.urihttp://hdl.handle.net/10722/142460-
dc.description.abstractA switching from a high-conduction state to a low-conduction state occurs in an AIN thin film containing Al nanocrystals (nc-AI) when the nc-AI is charged with electrons. The switching is explained in terms of breaking of the conductive percolation paths of the nc-AI as a result of the charging of the nc-AI. A write-once-read many times-memory (WORM) device is demonstrated based on this phenomenon. The device can be switched by charging the nc-AI with a voltage of +10 V for 100 ms, yielding a current ratio of the two memory states of more than 300 at the reading voltage of 1 V. The charged state (i.e., the low-conduction state) remains unchanged after more than 1 x 106 read cycles, and its retention time is predicted to be more than 10 years. © 2010 American.en_HK
dc.languageengen_US
dc.publisherAmerican Scientific Publishers. The Journal's web site is located at http://aspbs.com/jnn/en_HK
dc.relation.ispartofJournal of Nanoscience and Nanotechnologyen_HK
dc.subjectMemoryen_HK
dc.subjectNanocrystalen_HK
dc.subjectWORMen_HK
dc.titleA two-terminal write-once-read-many-times-memory device based on an aluminum nitride thin film containing al nanocrystalsen_HK
dc.typeArticleen_HK
dc.identifier.emailFung, S: sfung@hku.hken_HK
dc.identifier.authorityFung, S=rp00695en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1166/jnn.2010.2440en_HK
dc.identifier.pmid21133107-
dc.identifier.scopuseid_2-s2.0-79952726380en_HK
dc.identifier.hkuros184559en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79952726380&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume10en_HK
dc.identifier.issue9en_HK
dc.identifier.spage5796en_HK
dc.identifier.epage5799en_HK
dc.identifier.isiWOS:000279836400039-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridLiu, Y=36063639400en_HK
dc.identifier.scopusauthoridChen, TP=7405540443en_HK
dc.identifier.scopusauthoridDing, L=21233704100en_HK
dc.identifier.scopusauthoridLi, YB=19337392800en_HK
dc.identifier.scopusauthoridZhang, S=7409376020en_HK
dc.identifier.scopusauthoridFung, S=7201970040en_HK
dc.identifier.issnl1533-4880-

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