Growth of Bi2Se3 on Si substrate by molecular beam epitaxy

Title	Growth of Bi2Se3 on Si substrate by molecular beam epitaxy
Authors	Kan, Xin.阚欣.
Advisors	Advisor(s):Xie, MH
Issue Date	2011
Publisher	The University of Hong Kong (Pokfulam, Hong Kong)
Citation	Kan, X. [阚欣]. (2011). Growth of Bi2Se3 on Si substrate by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4647468
Degree	Master of Philosophy
Subject	Molecular beam epitaxy. Silicon. Bismuth compounds.
Dept/Program	Physics
Persistent Identifier	http://hdl.handle.net/10722/141975
HKU Library Item ID	b4647468

DC Field	Value	Language
dc.contributor.advisor	Xie, MH	-
dc.contributor.author	Kan, Xin.	-
dc.contributor.author	阚欣.	-
dc.date.issued	2011	-
dc.identifier.citation	Kan, X. [阚欣]. (2011). Growth of Bi2Se3 on Si substrate by molecular beam epitaxy. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4647468	-
dc.identifier.uri	http://hdl.handle.net/10722/141975	-
dc.language	eng	-
dc.publisher	The University of Hong Kong (Pokfulam, Hong Kong)	-
dc.relation.ispartof	HKU Theses Online (HKUTO)	-
dc.rights	The author retains all proprietary rights, (such as patent rights) and the right to use in future works.	-
dc.rights	This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.	-
dc.source.uri	http://hub.hku.hk/bib/B46474687	-
dc.subject.lcsh	Molecular beam epitaxy.	-
dc.subject.lcsh	Silicon.	-
dc.subject.lcsh	Bismuth compounds.	-
dc.title	Growth of Bi2Se3 on Si substrate by molecular beam epitaxy	-
dc.type	PG_Thesis	-
dc.identifier.hkul	b4647468	-
dc.description.thesisname	Master of Philosophy	-
dc.description.thesislevel	Master	-
dc.description.thesisdiscipline	Physics	-
dc.description.nature	published_or_final_version	-
dc.identifier.doi	10.5353/th_b4647468	-
dc.date.hkucongregation	2011	-
dc.identifier.mmsid	991032278129703414	-