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Article: Negative differential resistance in bilayer graphene nanoribbons

TitleNegative differential resistance in bilayer graphene nanoribbons
Authors
Habib, KMMZahid, FLake, RK
KeywordsActive elements
Applied bias
Bi-layer
Electronic device
Graphene nanoribbons
Issue Date2011
PublisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/
Citation
Applied Physics Letters, 2011, v. 98 n. 19, article no. 192112 How to Cite?
DOI: http://dx.doi.org/10.1063/1.3590772
AbstractLack of a bandgap is one of the significant challenges for application of graphene as the active element of an electronic device. A bandgap can be induced in bilayer graphene by application of a potential difference between the two layers. The simplest geometry for creating such a potential difference is two overlayed graphene nanoribbons independently contacted. Calculations, based on density functional theory and the nonequilibrium Green's function formalism, show that transmission through such a structure is a strong function of applied bias. The simulated current voltage characteristics mimic the characteristics of resonant tunneling diode featuring negative differential resistance. © 2011 American Institute of Physics.
Persistent Identifierhttp://hdl.handle.net/10722/135375
ISSN
0003-6951
2023 Impact Factor: 3.5
2023 SCImago Journal Rankings: 0.976
ISI Accession Number ID
WOS:000290586800035
Funding AgencyGrant Number
Microelectronics Advanced Research Corporation Focus Center on Nano Materials (FENA)
Funding Information:

This work is supported by the Microelectronics Advanced Research Corporation Focus Center on Nano Materials (FENA).

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorHabib, KMMen_HK
dc.contributor.authorZahid, Fen_HK
dc.contributor.authorLake, RKen_HK
dc.date.accessioned2011-07-27T01:34:15Z-
dc.date.available2011-07-27T01:34:15Z-
dc.date.issued2011en_HK
dc.identifier.citationApplied Physics Letters, 2011, v. 98 n. 19, article no. 192112-
dc.identifier.issn0003-6951en_HK
dc.identifier.urihttp://hdl.handle.net/10722/135375-
dc.description.abstractLack of a bandgap is one of the significant challenges for application of graphene as the active element of an electronic device. A bandgap can be induced in bilayer graphene by application of a potential difference between the two layers. The simplest geometry for creating such a potential difference is two overlayed graphene nanoribbons independently contacted. Calculations, based on density functional theory and the nonequilibrium Green's function formalism, show that transmission through such a structure is a strong function of applied bias. The simulated current voltage characteristics mimic the characteristics of resonant tunneling diode featuring negative differential resistance. © 2011 American Institute of Physics.en_HK
dc.languageengen_US
dc.publisherAmerican Institute of Physics. The Journal's web site is located at http://apl.aip.org/en_HK
dc.relation.ispartofApplied Physics Lettersen_HK
dc.rightsCopyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 2011, v. 98 n. 19, article no. 192112 and may be found at https://doi.org/10.1063/1.3590772-
dc.subjectActive elements-
dc.subjectApplied bias-
dc.subjectBi-layer-
dc.subjectElectronic device-
dc.subjectGraphene nanoribbons-
dc.titleNegative differential resistance in bilayer graphene nanoribbonsen_HK
dc.typeArticleen_HK
dc.identifier.openurlhttp://library.hku.hk:4550/resserv?sid=HKU:IR&issn=0003-6951&volume=98&issue=19, article no. 192112&spage=&epage=&date=2011&atitle=Negative+differential+resistance+in+bilayer+graphene+nanoribbons-
dc.identifier.emailZahid, F: fzahid@hku.hken_HK
dc.identifier.authorityZahid, F=rp01472en_HK
dc.description.naturepublished_or_final_version-
dc.identifier.doi10.1063/1.3590772en_HK
dc.identifier.scopuseid_2-s2.0-79959632567en_HK
dc.identifier.hkuros187699en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-79959632567&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume98en_HK
dc.identifier.issue19en_HK
dc.identifier.spagearticle no. 192112-
dc.identifier.epagearticle no. 192112-
dc.identifier.isiWOS:000290586800035-
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridHabib, KMM=41761759400en_HK
dc.identifier.scopusauthoridZahid, F=8568996000en_HK
dc.identifier.scopusauthoridLake, RK=7102860762en_HK
dc.identifier.issnl0003-6951-

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