Showing results 1 to 2 of 2
Title | Author(s) | Issue Date | Views | |
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Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer Journal:Applied Physics A: Materials Science and Processing | 2010 | 253 | ||
Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric Journal:Applied Physics A: Materials Science and Processing | 2010 |