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Article: GaN-nanowire-based dye-sensitized solar cells

TitleGaN-nanowire-based dye-sensitized solar cells
Authors
Chen, XYYip, CTFung, MKDjurišić, ABChan, WK
Issue Date2010
PublisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htm
Citation
Applied Physics A: Materials Science And Processing, 2010, v. 100 n. 1, p. 15-19 How to Cite?
DOI: http://dx.doi.org/10.1007/s00339-010-5580-9
AbstractGaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate DSSCs based on GaN/gallium oxide and GaN/TiO x core-shell structures, and we show that coating of GaN nanowires with a TiO x shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit current density of 1.83 mA/cm2 and power conversion efficiency of 0.44% under AM 1.5 simulated solar illumination. © 2010 Springer-Verlag.
Persistent Identifierhttp://hdl.handle.net/10722/129349
ISSN
0947-8396
2023 Impact Factor: 2.5
2023 SCImago Journal Rankings: 0.446
ISI Accession Number ID
WOS:000279127700003
Funding AgencyGrant Number
Strategic Research Theme
University Development Fund
Seed Funding Grant
Outstanding Young Researcher Award
Funding Information:

Financial support from the Strategic Research Theme, University Development Fund, Seed Funding Grant, and Outstanding Young Researcher Award (administrated by The University of Hong Kong) is acknowledged.

References
References in Scopus

 

DC FieldValueLanguage
dc.contributor.authorChen, XYen_HK
dc.contributor.authorYip, CTen_HK
dc.contributor.authorFung, MKen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorChan, WKen_HK
dc.date.accessioned2010-12-23T08:35:44Z-
dc.date.available2010-12-23T08:35:44Z-
dc.date.issued2010en_HK
dc.identifier.citationApplied Physics A: Materials Science And Processing, 2010, v. 100 n. 1, p. 15-19en_HK
dc.identifier.issn0947-8396en_HK
dc.identifier.urihttp://hdl.handle.net/10722/129349-
dc.description.abstractGaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate DSSCs based on GaN/gallium oxide and GaN/TiO x core-shell structures, and we show that coating of GaN nanowires with a TiO x shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit current density of 1.83 mA/cm2 and power conversion efficiency of 0.44% under AM 1.5 simulated solar illumination. © 2010 Springer-Verlag.en_HK
dc.languageengen_US
dc.publisherSpringer Verlag. The Journal's web site is located at http://link.springer.de/link/service/journals/00339/index.htmen_HK
dc.relation.ispartofApplied Physics A: Materials Science and Processingen_HK
dc.rightsThe original publication is available at www.springerlink.comen_US
dc.titleGaN-nanowire-based dye-sensitized solar cellsen_HK
dc.typeArticleen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailChan, WK: waichan@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityChan, WK=rp00667en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1007/s00339-010-5580-9en_HK
dc.identifier.scopuseid_2-s2.0-77954089211en_HK
dc.identifier.hkuros176919en_US
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-77954089211&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume100en_HK
dc.identifier.issue1en_HK
dc.identifier.spage15en_HK
dc.identifier.epage19en_HK
dc.identifier.isiWOS:000279127700003-
dc.publisher.placeGermanyen_HK
dc.identifier.scopusauthoridChen, XY=22933917300en_HK
dc.identifier.scopusauthoridYip, CT=14043063100en_HK
dc.identifier.scopusauthoridFung, MK=35191896100en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridChan, WK=13310083000en_HK
dc.identifier.citeulike6788122-
dc.identifier.issnl0947-8396-

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