Reactive interface formation and Co-induced (√7×√7 ) superstructure on a GaN(0001) pseudo- (1×1 ) substrate surface

Abstract

Deposition of Co on GaN(0001) pseudo- (1×1) surface at room temperature by molecular-beam epitaxy is studied by low-energy electron diffraction, scanning-tunneling microscopy and first-principles total energy calculations. Reactive interface formation where the deposited Co reacts with Ga on GaN substrate forming CoGax (x∼2) compound or alloy can be inferred from surface morphology evolution and mass consideration. At an intermediate coverage about 0.4 monolayers, a specific (√7×√7) surface structural phase develops, as observed by both low-energy electron diffraction and scanning tunneling microscopy studies. First-principles total energy calculations suggest that the (√7×√7) structure is induced by Co-trimers located slightly below the topmost Ga adlayer of the substrate. © 2010 The American Physical Society.