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Conference Paper: Deep level defect study of As-implanted ZnO p-n junction

TitleDeep level defect study of As-implanted ZnO p-n junction
Authors
Zhu, CLing, FCCBrauer, GAnwand, WSkorupa, W
Issue Date2008
PublisherMicroelectronics Journal.
Citation
Wide Band Gap Semiconductor Nanostructures for Optoelectronic Applications, E-MRS 2008 Spring Meeting, Strasbourg, France, May 26-30, 2008, p. G-13 How to Cite?
Persistent Identifierhttp://hdl.handle.net/10722/109816

 

DC FieldValueLanguage
dc.contributor.authorZhu, Cen_HK
dc.contributor.authorLing, FCCen_HK
dc.contributor.authorBrauer, Gen_HK
dc.contributor.authorAnwand, Wen_HK
dc.contributor.authorSkorupa, Wen_HK
dc.date.accessioned2010-09-26T01:38:30Z-
dc.date.available2010-09-26T01:38:30Z-
dc.date.issued2008en_HK
dc.identifier.citationWide Band Gap Semiconductor Nanostructures for Optoelectronic Applications, E-MRS 2008 Spring Meeting, Strasbourg, France, May 26-30, 2008, p. G-13en_HK
dc.identifier.urihttp://hdl.handle.net/10722/109816-
dc.languageengen_HK
dc.publisherMicroelectronics Journal.en_HK
dc.relation.ispartofWide Band Gap Semiconductor Nanostructures for Optoelectronic Applications, E-MRS 2008 Spring Meeting, Strasbourg, France, May 26-30, 2008en_HK
dc.titleDeep level defect study of As-implanted ZnO p-n junctionen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailLing, FCC: ccling@hkucc.hku.hken_HK
dc.identifier.authorityLing, FCC=rp00747en_HK
dc.identifier.hkuros144657en_HK
dc.identifier.epage13en_HK

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