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Conference Paper: Influence of different insulating polymers on the performance of ZnO nanorod based LEDs

TitleInfluence of different insulating polymers on the performance of ZnO nanorod based LEDs
Authors
KeywordsGaN/ZnO
Insulating polymers
LED
Issue Date2008
PublisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xml
Citation
Proceedings of SPIE, v. 6988, p. 69881O: 1-8 How to Cite?
AbstractZnO is a promising material for optoelectronic devices because of its wide bandgap and large exciton binding energy. However, majority of studies of ZnO nanostructures have been focusing on the study of their optical and structural properties. For device applications of ZnO, other factors besides ZnO material quality also play a significant role. For example, a typical ZnO nanorod based light emitting diode (LED) contains a polymer insulating layer and a top contact. The device performance is dependent on the insulating layer and top contact quality. In this work, the effect of different insulating polymers on the performance of p-GaN/n-ZnO LED was investigated. The structure of LED was: Au/ Ni/p-GaN/ZnO nanorods/insulating polymers/Ag. The ZnO nanorods were fabricated by hydrothermal method, and the length of the nanorods was 250 nm. In this work, we investigated absorption spectra, electroluminescence (EL) properties, and I-V curves to characterize the performance of the devices fabricated using spin-on glass (SOG), poly(vinylalcohol) (PVA), polymethyl methacrylate (PMMA) and polystyrene (PS) as insulating layers. Finally, the comparison of the performance of the devices with different polymers was discussed.
Persistent Identifierhttp://hdl.handle.net/10722/109719
ISSN
2023 SCImago Journal Rankings: 0.152
References

 

DC FieldValueLanguage
dc.contributor.authorZhang, SLen_HK
dc.contributor.authorDjurišić, ABen_HK
dc.contributor.authorHsu, YFen_HK
dc.contributor.authorNg, AMCen_HK
dc.contributor.authorXie, MHen_HK
dc.date.accessioned2010-09-26T01:34:17Z-
dc.date.available2010-09-26T01:34:17Z-
dc.date.issued2008en_HK
dc.identifier.citationProceedings of SPIE, v. 6988, p. 69881O: 1-8en_HK
dc.identifier.issn0277-786Xen_HK
dc.identifier.urihttp://hdl.handle.net/10722/109719-
dc.description.abstractZnO is a promising material for optoelectronic devices because of its wide bandgap and large exciton binding energy. However, majority of studies of ZnO nanostructures have been focusing on the study of their optical and structural properties. For device applications of ZnO, other factors besides ZnO material quality also play a significant role. For example, a typical ZnO nanorod based light emitting diode (LED) contains a polymer insulating layer and a top contact. The device performance is dependent on the insulating layer and top contact quality. In this work, the effect of different insulating polymers on the performance of p-GaN/n-ZnO LED was investigated. The structure of LED was: Au/ Ni/p-GaN/ZnO nanorods/insulating polymers/Ag. The ZnO nanorods were fabricated by hydrothermal method, and the length of the nanorods was 250 nm. In this work, we investigated absorption spectra, electroluminescence (EL) properties, and I-V curves to characterize the performance of the devices fabricated using spin-on glass (SOG), poly(vinylalcohol) (PVA), polymethyl methacrylate (PMMA) and polystyrene (PS) as insulating layers. Finally, the comparison of the performance of the devices with different polymers was discussed.en_HK
dc.languageengen_HK
dc.publisherS P I E - International Society for Optical Engineering. The Journal's web site is located at http://spie.org/x1848.xmlen_HK
dc.relation.ispartofProceedings of SPIE - The International Society for Optical Engineeringen_HK
dc.subjectGaN/ZnOen_HK
dc.subjectInsulating polymersen_HK
dc.subjectLEDen_HK
dc.titleInfluence of different insulating polymers on the performance of ZnO nanorod based LEDsen_HK
dc.typeConference_Paperen_HK
dc.identifier.emailDjurišić, AB: dalek@hku.hken_HK
dc.identifier.emailXie, MH: mhxie@hku.hken_HK
dc.identifier.authorityDjurišić, AB=rp00690en_HK
dc.identifier.authorityXie, MH=rp00818en_HK
dc.description.naturelink_to_subscribed_fulltext-
dc.identifier.doi10.1117/12.780481en_HK
dc.identifier.scopuseid_2-s2.0-45549108043en_HK
dc.identifier.hkuros148815en_HK
dc.relation.referenceshttp://www.scopus.com/mlt/select.url?eid=2-s2.0-45549108043&selection=ref&src=s&origin=recordpageen_HK
dc.identifier.volume6988en_HK
dc.identifier.spage69881en_HK
dc.identifier.epage8en_HK
dc.publisher.placeUnited Statesen_HK
dc.identifier.scopusauthoridZhang, SL=22982333400en_HK
dc.identifier.scopusauthoridDjurišić, AB=7004904830en_HK
dc.identifier.scopusauthoridHsu, YF=16063930300en_HK
dc.identifier.scopusauthoridNg, AMC=12140078600en_HK
dc.identifier.scopusauthoridXie, MH=7202255416en_HK
dc.identifier.issnl0277-786X-

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