HKU Scholars Hub: Project

High-k Gate Dielectrics for High-Performance Germanium MISFET's

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Grant Data

Project Title

High-k Gate Dielectrics for High-Performance Germanium MISFET's

Principal Investigator

Professor Lai, Pui To (Principal Investigator (PI))

Duration

Start Date

2008-09-01

Amount

367255

Conference Title

High-k Gate Dielectrics for High-Performance Germanium MISFET's

Presentation Title

Keywords

Dielectrics, Germanium MISFET's, High-k Gate

Discipline

Electronics

Panel

Engineering (E)

HKU Project Code

HKU 713308E

Grant Type

General Research Fund (GRF)

Funding Year

2008

Status

Completed

All Publications

Showing 1 to 10 of 10 entries

Title	Author(s)	Issue Date
Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness Journal:Thin Solid Films	Xu, JP Zou, X Lai, PT Li, CX Chan, CL	2009
Improved performance of yttrium-doped Al2O3 as inter-poly dielectric for flash-memory applications Journal:IEEE Transactions on Device and Materials Reliability	Huang, XD Liu, L Xu, JP Lai, PT	2011
Improved interfacial properties of Ge MOS capacitor with high-k dielectric by using TaON/GeON dual interlayer Journal:IEEE Electron Device Letters	Ji, F Xu, JP Lai, PT Li, CX Liu, JG	2011
Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer Journal:Applied Physics Letters	Ji, F Xu, JP Liu, JG Li, CX Lai, PT	2011
Improved electrical properties of Ge metal-oxide-semiconductor capacitors with high- k HfO 2 gate dielectric by using La 2 O 3 interlayer sputtered with/without N 2 ambient Journal:Applied Physics Letters	Xu, HX Xu, JP Li, CX Lai, PT	2010
Impacts of Ti on electrical properties of Ge metal-oxide-semiconductor capacitors with ultrathin high-κ LaTiON gate dielectric Journal:Applied Physics A: Materials Science and Processing	Xu, HX Xu, JP Li, CX Chan, CL Lai, PT	2010
Electrical properties of Ge metal-oxide-semiconductor capacitors with La 2O 3 gate dielectric annealed in different ambient Journal:Thin Solid Films	Xu, HX Xu, JP Li, CX Lai, PT	2010
Effects of fluorine incorporation on the properties of Ge p-MOS capacitors with HfTiON dielectric Journal:Solid-State Electronics	Li, CX Leung, CH Lai, PT Xu, JP	2010
Comparative study of HfTa-based gate-dielectric Ge metal-oxide- semiconductor capacitors with and without AlON interlayer Journal:Applied Physics A: Materials Science and Processing	Xu, JP Zhang, XF Li, CX Chan, CL Lai, PT	2010
A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode Journal:Microelectronics Reliability	Xu, JP Xiao, X Lai, PT	2010

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