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| Title | Author(s) | Issue Date | |
|---|---|---|---|
720-V/0.35-m Ω . cm<sup>2</sup> Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers Journal:IEEE Electron Device Letters | 2018 |
| Title | Author(s) | Issue Date | |
|---|---|---|---|
720-V/0.35-m Ω . cm<sup>2</sup> Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers Journal:IEEE Electron Device Letters | 2018 |