Showing results 1 to 3 of 3
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Implanted Guard Ring Edge Termination with Avalanche Capability for Vertical GaN Devices Journal:IEEE Transactions on Electron Devices | 2024 | ||
Planar Implantation Edge Termination for Vertical GaN Power Devices Proceeding/Conference:2023 IEEE 10th Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2023 | 2023 | ||
Rapid Inverse Design of GaN-on-GaN Diode with Guard Ring Termination for BV and (V<inf>F</inf>Q)<sup>-1</sup>Co-Optimization Proceeding/Conference:Proceedings of the International Symposium on Power Semiconductor Devices and ICs | 2023 |