Showing results 1 to 2 of 2
| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Avalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting | 2000 | 124 | ||
Self-aligned structure AlGaAs/GaAs HBT's using silicon nitride sidewall technique Proceeding/Conference:Proceedings of the IEEE Hong Kong Electron Devices Meeting | 2000 | 92 |