Browsing by Author Xiao, M.

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Showing results 1 to 6 of 6
TitleAuthor(s)Issue Date
 
1.2 kV vertical GaN Fin JFETs with robust avalanche and fast switching capabilities
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
Liu, J.Xiao, M.Zhang, Y.Pidaparthi, S.Cui, H.Edwards, A.Baubutr, L.Meier, W.Coles, C.Drowley, C.
2020
 
5 kV multi-channel AlGaN/GaN power schottky barrier diodes with junction-fin-anode
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
Xiao, M.Ma, Y.Du, Z.Yan, X.Zhang, R.Cheng, K.Liu, K.Xie, A.Beam, E.Cao, Y.Wang, H.Zhang, Y.
2020
 
Dynamic breakdown voltage of GaN Power HEMTs
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
Zhang, R.Kozak, J. P.Song, Q.Xiao, M.Liu, J.Zhang, Y.
2020
 
Factors affecting greenhouse microclimate and its regulating techniques: A review
Proceeding/Conference:IOP Conference Series: Earth and Environmental Science
Li, G.Tang, L.Zhang, X.Dong, J.Xiao, M.
2018
 
Forecasting the Hydroclimatic Signature of the 2015/16 El Niño Event on the Western United States
Journal:Journal of Hydrometeorology
Wanders, N.Bachas, A.He, X. G.Huang, H.Koppa, A.Mekonnen, Z. T.Pagán, B. R.Peng, L. Q.Vergopolan, N.Wang, K. J.Xiao, M.Zhan, S.Lettenmaier, D. P.Wood, E. F.
2017
 
Multi-Channel Monolithic-Cascode HEMT (MC<sup>2</sup>-HEMT): A New GaN Power Switch up to 10 kV
Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM
Xiao, M.Ma, Y.Du, Z.Pathirana, V.Cheng, K.Xie, A.Beam, E.Cao, Y.Udrea, F.Wang, H.Zhang, Y.
2021
Showing results 1 to 6 of 6