Showing results 1 to 3 of 3
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Activating Thick Buried p-GaN for Device Applications Journal:IEEE Transactions on Electron Devices | 2022 | ||
Breakdown Voltage and Leakage Current of the Nonuniformly Activated Lightly Doped p-GaN Journal:IEEE Transactions on Electron Devices | 2024 | ||
Resolving emission rates from overlapping capacitance transients of deep levels in SiC Journal:Journal of Physics D: Applied Physics | 3-Mar-2025 |