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| Title | Author(s) | Issue Date | |
|---|---|---|---|
Nanowire channel InAlN/GaN HEMTs with high linearity of g<inf>m</inf> and f<inf>T</inf> Journal:IEEE Electron Device Letters | 2013 |
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Nanowire channel InAlN/GaN HEMTs with high linearity of g<inf>m</inf> and f<inf>T</inf> Journal:IEEE Electron Device Letters | 2013 |