Showing results 1 to 4 of 4
Title | Author(s) | Issue Date | Views | |
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Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolution Journal:Advanced Materials | 2008 | |||
2018 | 61 | |||
The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence Journal:Applied Physics Letters | 2007 | 204 | ||
Realizing high performance n-type PbTe by synergistically optimizing effective mass and carrier mobility and suppressing bipolar thermal conductivity Journal:Energy & Environmental Science | 2018 | 22 |