Showing results 1 to 4 of 4
| Title | Author(s) | Issue Date | |
|---|---|---|---|
Direct observation of inversion domain boundaries of GaN on c-sapphire at sub-ångstrom resolution Journal:Advanced Materials | 2008 | ||
| 2018 | |||
The mechanism for polarity inversion of GaN via a thin AlN layer: Direct experimental evidence Journal:Applied Physics Letters | 2007 | ||
Realizing high performance n-type PbTe by synergistically optimizing effective mass and carrier mobility and suppressing bipolar thermal conductivity Journal:Energy & Environmental Science | 2018 |