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Title | Author(s) | Issue Date | |
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71 GHz-f<inf>max</inf> β-Ga<inf>2</inf>O<inf>3</inf>-on-SiC RF Power MOSFETs with Record P<inf>out</inf>=3.1 W/mm and PAE=50.8% at 2 GHz, P<inf>out</inf>= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure Proceeding/Conference:Digest of Technical Papers - Symposium on VLSI Technology | 2024 |