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Showing results 1 to 6 of 6

	Title	Author(s)	Issue Date
	Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas Journal:Applied Physics Letters	Hsu, CC Yang, YF Ou, HJ Yang, ES Lo, HB	1997
	CCl4-doped semi-insulating InP as a buffer layer in GaInAs/InP high electron mobility transistors Journal:Applied Physics Letters	Hsu, CC Yang, YF Ou, HJ Yang, ES	1996
	Fabrication and characteristics of a GaInP/GaAs heterojunction bipolar transistor using a selective buried sub-collector Journal:IEEE Transactions on Electron Devices	Yang, YF Hsu, CC Ou, HJ Huang, TC Yang, ES	1997
	High frequency GalnP/GaAs heterostructure-emitter bipolar transistor with low offset voltage Journal:Electronics Letters	Ou, HJ Hsu, CC Yang, YF Yang, ES	1997
	A high-frequency GaInP/GaAs heterojunction bipolar transistor with reduced base-collector capacitance using a selective buried sub-collector Journal:IEEE Electron Device Letters	Yang, YF Hsu, CC Yang, ES Ou, HJ	1996
	Temperature dependence of current gain of GalnP/GaAs heteroj unction and heterostructure-emitter bipolar transistors Journal:IEEE Transactions on Electron Devices	Yang, ES Yang, YF Hsu, CC Ou, HJ Lo, HB	1999

Showing results 1 to 6 of 6