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| Title | Author(s) | Issue Date | |
|---|---|---|---|
1.1 A/mm ß-Ga<inf>2</inf>O<inf>3</inf>-on-SiC RF MOSFETs with 2.3 W/mm P<inf>out</inf> and 30% PAE at 2 GHz and f<inf>T</inf>/f<inf>max</inf> of 27.6/57 GHz Proceeding/Conference:Technical Digest - International Electron Devices Meeting, IEDM | 2023 |