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| Title | Author(s) | Issue Date | Views | |
|---|---|---|---|---|
Nanoscale physical analysis of localized breakdown events in HfO<inf>2</inf>/SiO<inf>X</inf> dielectric stacks: A correlation study of STM induced BD with C-AFM and TEM Proceeding/Conference:Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA | 2012 | 7 |