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	Title	Author(s)	Issue Date
	The van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator Journal:New Journal of Physics	Li, HD Wang, ZY Kan, X Guo, X He, HT Wang, Z Wang, JN Wong, TL Wang, N Xie, MH	2010

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